Z0107SN1AA2 STMicroelectronics, Z0107SN1AA2 Datasheet - Page 5

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Z0107SN1AA2

Manufacturer Part Number
Z0107SN1AA2
Description
1A TRIACS
Manufacturer
STMicroelectronics
Datasheet
2.5
2.0
1.5
1.0
0.5
0.0
100.0
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
Fig. 8: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values).
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10.0
-40
1.0
0.1
0.1
IGT,IH,IL [Tj] / IGT,IH,IL [Tj=25°C]
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
0.01
ITSM (A), I²t (A²s)
IH & IL
-20
dI/dt limitation:
IGT
20A/µs
0
Z0103
1.0
(dV/dt)c (V/µs)
20
0.10
Z0107
40
Tj(°C)
tp (ms)
60
10.0
1.00
80
Z0109
100
Z0110
Tj initial=25°C
ITSM
I²t
120
100.0
10.00
140
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
10.0
Fig. 5: Surge peak on-state current versus
number of cycles.
Fig. 7:
values).
Fig. 9: Relative variation of critical rate of
decrease of main current versus junction
temperature.
1.0
0.1
1
0
ITSM(A)
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
ITM(A)
Tj=Tj max.
Tamb=25°C
Repetitive
25
On-state characteristics
10
Number of cycles
Non repetitive
Tj initial=25°C
Tj=25°C
50
Tj (°C)
VTM(V)
75
100
Z01 Series
100
t=20ms
Rd= 420 m
One cycle
(maximum
Vto= 0.95 V
Tj max.
1000
125
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