MAC12HCD ON, MAC12HCD Datasheet - Page 2

• Manufacturer Part Number: MAC12HCD
• Description: Triacs Silicon Bidirectional Thyristors
• Manufacturer: ON

(1) Pulse Test: Pulse Width
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
THERMAL CHARACTERISTICS
Thermal Resistance
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds
Peak Repetitive Blocking Current
Peak On-State Voltage
Gate Trigger Current (Continuous dc) (V
Holding Current
Latch Current (V
Gate Trigger Voltage (Continuous dc) (V
Rate of Change of Commutating Current
Critical Rate of Rise of Off-State Voltage
Repetitive Critical Rate of Rise of On-State Current
— Junction to Case
— Junction to Ambient
(V
(I
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
(V
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
(V
= 125 C, f = 250 Hz, C
(V
Gate Open, T
IPK = 50 A; PW = 40 sec; diG/dt = 200 mA/ sec; f = 60 Hz
TM
D
D
D
D
= Rated V
= 12 V, Gate Open, Initiating Current = 150 mA)
= 400 V, I
= Rated V
= 17 A)
TM
J
DRM
D
DRM
= 125 C)
= 12 V, I
= 4.4 A, Commutating dv/dt = 18 V/ s, Gate Open, T
, V
, Exponential Waveform,
(1)
RRM
L
= 10 F, L
G
2.0 ms, Duty Cycle
, Gate Open)
Characteristic
= 50 mA)
L
MAC12HCD, MAC12HCM, MAC12HCN
= 40 mH, with Snubber)
(T
D
D
Characteristic
J
= 12 V, R
= 12 V, R
= 25 C unless otherwise noted; Electricals apply in both directions)
2%.
L
L
= 100 )
= 100 )
http://onsemi.com
T
T
J
J
= 25 C
= 125 C
2
J
Symbol
(di/dt)
I
dv/dt
I
DRM
di/dt
V
V
RRM
I
GT
I
I
TM
GT
H
L
,
c
Min
600
0.5
0.5
0.5
10
10
10
15
—
—
—
—
—
—
—
—
Symbol
R
R
T
Typ
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
JC
L
JA
Value
Max
0.01
1.85
62.5
260
2.0
1.5
1.5
1.5
2.2
50
50
50
60
60
80
60
10
—
—
A/ms
V/ s
A/ s
Unit
Unit
mA
mA
mA
mA
C/W
V
V
C