1N914-914A-914B NXP Semiconductors, 1N914-914A-914B Datasheet - Page 2

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1N914-914A-914B

Manufacturer Part Number
1N914-914A-914B
Description
1n914; 1n914a; 1n914b High-speed Diodes
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
FEATURES
APPLICATIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board; lead length 10 mm.
2003 Jun 06
V
V
I
I
I
P
T
T
SYMBOL
F
FRM
FSM
stg
j
Hermetically sealed leaded glass
SOD27 (DO-35) package
High switching speed: max. 4 ns
Continuous reverse voltage:
max. 75 V
Repetitive peak reverse voltage:
max. 100 V
Repetitive peak forward current:
max. 225 mA.
High-speed switching.
RRM
R
tot
High-speed diodes
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
total power dissipation
storage temperature
junction temperature
PARAMETER
DESCRIPTION
The 1N914, 1N914A and 1N914B are high-speed switching diodes fabricated
in planar technology, and encapsulated in a hermetically sealed leaded glass
SOD27 (DO-35) package.
The diode is type branded.
The marking band indicates the cathode.
see Fig.2; note 1
square wave; T
surge; see Fig.4
T
handbook, halfpage
amb
t = 1 s
t = 1 ms
t = 1 s
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
= 25 C; note 1
2
CONDITIONS
k
j
= 25 C prior to
1N914; 1N914A; 1N914B
65
MIN.
a
Product specification
100
75
75
225
4
1
0.5
250
+200
175
MAX.
MAM246
V
V
mA
mA
A
A
A
mW
C
C
UNIT

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