CMPA2560025D Cree, Inc., CMPA2560025D Datasheet - Page 3

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CMPA2560025D

Manufacturer Part Number
CMPA2560025D
Description
Cree, Cmpa0060005f 5w, Gan Hemt Mmic Cree Wireless , Driver
Manufacturer
Cree, Inc.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CMPA2560025D
Manufacturer:
CREE
Quantity:
1 400
Part Number:
CMPA2560025D
Manufacturer:
CREE/科锐
Quantity:
20 000
Die Dimensions (units in inches)
Die Assembly Notes:
Copyright © 2008-2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
Pad Number
3
10
1
2
3
4
5
6
7
8
9
Notes:
1
2
3
Recommended solder is AuSn (80/20) solder. Refer to Cree’s website for the Eutectic Die Bond Procedure
application note at
Vacuum collet is the preferred method of pick-up.
The backside of the die is the Source (ground) contact.
Die back side gold plating is 5 microns thick minimum.
Thermosonic ball or wedge bonding are the preferred connection methods.
Gold wire must be used for connections.
Use the die label (XX-YY) for correct orientation.
Attach bypass capacitor to port 2-9 per application circuit.
VG1_A and VG1_B is connected internally so it would be enough to connect either one for proper operation.
The RF Input and Output pad have a ground-signal-ground with a pitch of 10 mil (250 um).
CMPA2560025D Rev 0.5, Preliminary
Function
RF-Out
VG1_A
VG1_B
VD1_A
VD1_B
VG2_A
VG2_B
VD2_A
VD2_B
RF-IN
Overall die size 0.180 x 0.145 (+0/-0.005) inches, die thickness 0.004 inches.
RF-Input pad. Matched to 50 ohm. Requires gate control from an external bias –T from
-1.5 V to -2.5 V and external blocking capacitor.
Gate control for stage 1. V
Gate control for stage 1. V
Drain supply for stage 1. V
Drain supply for stage 1. V
Gate control for stage 2A. V
Gate control for stage 2A. V
Drain supply for stage 2A. V
Drain supply for stage 2B. V
This pad is DC blocked internally. The DC impedance ~ 0 ohm due output matching circuit.
Requires external matching circuit for optimal performance for f >4.0 GHz.
All Gate and Drain pads must be wire bonded for electrical connection.
http://www.cree.com/products/wireless_appnotes.asp
G
G
D
D
G
G
~ 1.5 - 2.5 V.
~ 1.5 - 2.5 V.
D
D
= 26 V.
= 26 V.
~ 1.5 - 2.5 V.
~ 1.5 - 2.5 V.
= 26 V.
= 26 V.
Description
0.008” x 0.008”
0.014” x 0.014”
0.014” x 0.014”
0.019” x 0.016”
0.019” x 0.016”
0.014” x 0.014”
0.014” x 0.014”
0.008” x 0.008”
Pad Size (in)
USA Tel: +1.919.313.5300
www.cree.com/wireless
Fax: +1.919.869.2733
A
A
Durham, NC 27703
4600 Silicon Drive
Cree, Inc.
Note
1,2
1,2
3
1
1
1
1
1
1
3

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