STI4N62K3 ST Microelectronics, STI4N62K3 Datasheet - Page 3

• Manufacturer Part Number: STI4N62K3
• Description: SuperMESH3 Power MOSFET
• Manufacturer: ST Microelectronics

STB/F/I/P4N62K3
1
Electrical ratings
Table 2.
1. Limited by package
2. Pulse width limited by safe operating area
3. I
Table 3.
1. When mounted on 1inch sq FR-4 board, 2 oz Cu
V
R
Symbol
R
Symbol
R
dv/dt
ESD(G-S)
thj-pcb
I
thj-case
P
thj-amb
DM
V
V
V
E
T
I
SD
T
I
I
TOT
AR
T
ISO
GS
DS
AS
stg
D
D
l
j
(2)
(3)
(1)
≤ 3.8 A, di/dt = 200 A/µs, V
Thermal resistance junction-case max
Thermal resistance junction-pcb max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Drain-source voltage (V
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Avalanche current, repetitive or not-
repetitive (pulse width limited by T
Single pulse avalanche energy
(starting T
Gate source ESD(HBM-C = 100 pF,
R = 1.5 kΩ)
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t = 1 s; T
Storage temperature
Max. operating junction temperature
Absolute maximum ratings
Thermal data
C
j
= 25°C, I
= 25 °C)
Parameter
Parameter
D
C
DD
Doc ID 17548 Rev 1
= I
= 25 °C
GS
= 80% V
AR
= 0)
, V
DD
C
C
(BR)DSS.
= 25 °C
= 100 °C
= 50V)
j
max)
TO-220 D²PAK I²PAK TO-220FP
TO-220 D²PAK I²PAK TO-220FP
62.5
300
1.79
15.2
3.8
70
30
2
- 55 to 150
Value
Value
2500
± 30
TBD
620
150
3.8
12
62.5
300
Electrical ratings
15.2
3.8
2500
www.DataSheet4U.com
2
25
5
(1)
(1)
(1)
°C/W
°C/W
°C/W
Unit
V/ns
Unit
°C
mJ
°C
°C
W
V
V
A
A
A
A
V
V
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