C1004 IMP Inc, C1004 Datasheet - Page 2

• Manufacturer Part Number: C1004
• Description: Process C1004
• Manufacturer: IMP Inc

18
Starting Material
Starting Mat. Resistivity
Typ. Operating Voltage
Well Type
Metal Layers
Poly Layers
Contact Size
Via Size
Metal-1 Width/Space
Metal-2 Width/Space
Gate Poly Width/Space
35.0
28.0
21.0
14.0
N-ch Transistor IV Characteristics of a 20/1.2 device
7.0
0
0
n
+
ID vs VD, W/L = 20/1.2
1.0
p
Drain Voltage (V) V
+
2.0
Metal 2
C1004-4-98
Physical Characteristics
3.0
N-well
1.4 / 1.2 m
2.0 / 1.4 m
1.0 / 1.4 m
p
V GS = 5.0V
V GS = 4.0V
V GS = 3.0V
V GS = 2.0V
V GS = 1.0V
DS
7-8.5 -cm
1.2x1.2 m
1.2x1.2 m
p
+
P <100>
+
4.0
N-well
substrate
5V
2
1
5.0
Metal 1
p
–
p
epi
N+/P+ Width/Space
N+ To P+ Space
Contact To Poly Space
Contact Overlap Of Diffusion
Contact Overlap Of Poly
Metal-1 Overlap Of Contact
Metal-1 Overlap Of Via
Metal-2 Overlap Of Via
Minimum Pad Opening
Minimum Pad-to-Pad Spacing
Minimum Pad Pitch
n
+
–15.0
–12.0
–9.0
–6.0
–3.0
SIO
P-ch Transistor IV Characteristics of a 20/1.2 device
LTO
0
2
0
–1.0
ID vs VD, W/L = 20/1.2
n
+
Process C1004
Drain Voltage (V) V
–2.0
p
+
–3.0
2.0 / 1.2 m
65x65 m
V GS = –5.0V
V GS = –4.0V
V GS = –3.0V
V GS = –2.0V
DS
80.0 m
7.0 m
0.8 m
0.7 m
0.7 m
0.7 m
0.7 m
0.7 m
5.0 m
Field Oxide
–4.0
p
LTO
–5.0