TC4426 Microchip Technology, TC4426 Datasheet - Page 2

• Manufacturer Part Number: TC4426
• Description: (TC4426 - TC4428) 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS
• Manufacturer: Microchip Technology

TC4426/7/8-8
TC4426
TC4427
TC4428
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +22V
Input Voltage, IN A or IN B . (V
Maximum Chip Temperature ................................. +150 C
Storage Temperature Range ................ – 65 C to +150 C
Lead Temperature (Soldering, 10 sec) ................. +300 C
Package Thermal Resistance
PIN CONFIGURATIONS
ELECTRICAL CHARACTERISTICS:
Symbol
Input
V
V
I
Output
V
V
R
I
I
Switching Time (Note 1)
t
t
t
t
Power Supply
I
NOTE: 1. Switching times are guaranteed by design.
IN
PK
REV
R
F
D1
D2
S
IH
IL
OH
OL
O
CerDIP R
CerDIP R
PDIP R
PDIP R
SOIC R
SOIC R
10/21/96
J-A
J-C
J-A
J-C
J-A
J-C
GND
NC = NO INTERNAL CONNECTION
NOTE: SOIC pinout is identical to DIP.
IN A
IN B
................................................... 125 C/W
..................................................... 42 C/W
................................................... 155 C/W
..................................................... 45 C/W
NC
Parameter
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current
High Output Voltage
Low Output Voltage
Output Resistance
Peak Output Current
Latch-Up Protection
Withstand Reverse Current
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply Current
................................................ 150 C/W
.................................................. 50 C/W
1
2
3
4
2,4
INVERTING
TC4426
7,5
DD
5
8
7
6
NC
OUT A
V
OUT B
+ 0.3V) to (GND – 5.0V)
DD
1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS
T
A
GND
= +25 C with 4.5V
IN A
IN B
Test Conditions
0V
V
Duty Cycle
Duty Cycle
t
Figure 1
Figure 1
Figure 1
Figure 1
V
V
NC
DD
IN
IN
30 sec
= 3V (Both Inputs)
= 0V (Both Inputs)
1
2
3
4
= 18V, I
NONINVERTING
V
2,4
IN
TC4427
V
2
O
DD
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
Operating Temperature Range
Package Power Dissipation (T
2%, t
2%
7,5
= 10mA
8
7
6
5
C Version ............................................... 0 C to +70 C
E Version .......................................... – 40 C to +85 C
M Version ....................................... – 55 C to +125 C
Plastic .............................................................730mW
CerDIP ............................................................800mW
SOIC ...............................................................470mW
NC
OUT A
OUT B
V DD
30 sec
V
DD
18V, unless otherwise specified.
V
GND
IN A
IN B
NC
DD
> 0.5
Min
2.4
– 1
– 0.025
—
—
—
—
—
—
—
—
—
—
1
2
3
4
DIFFERENTIAL
2
4
TC4428
© 2001 Microchip Technology Inc.
A
70 C)
Typ
7
5
1.5
19
19
20
40
—
—
—
—
—
—
—
—
7
5
8
7
6
NC
OUT A
V DD
OUT B
0.025
Max
0.8
4.5
0.4
10
30
30
30
50
—
—
—
—
1
DS21422A
nsec
nsec
nsec
nsec
Unit
V
V
V
V
A
A
mA
mA
A