TC4469 TelCom Semiconductor, TC4469 Datasheet - Page 2

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TC4469

Manufacturer Part Number
TC4469
Description
(TC4467 - TC4469) LOGIC-INPUT CMOS QUAD DRIVERS
Manufacturer
TelCom Semiconductor
Datasheet

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TC4467
TC4468
TC4469
ELECTRICAL CHARACTERISTICS:
Symbol
Input
V
V
I
Output
V
V
R
I
I
I
Switching Time
t
t
t
t
Power Supply
I
V
TRUTH TABLE
Part No.
INPUTS A
INPUTS B
OUTPUTS TC446X
4-262
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +20V
Input Voltage ......................... (GND – 5V) to (V
Maximum Chip Temperature
Maximum Lead Temperature
Operating Ambient Temperature Range
Package Power Dissipation (T
H = High
IN
PK
DC
R
F
D1
D2
S
IH
IL
OH
OL
DD
O
Operating ........................................................ +150 C
Storage ............................................. – 65 to +150 C
(Soldering, 10 sec) ......................................... +300 C
C Device .................................................. 0 to +70 C
E Device ............................................. – 40 to +85 C
M Device ........................................... – 55 to +125 C
14-Pin CerDIP ................................................840mW
14-Pin Plastic DIP ...........................................800mW
16-Pin Wide SOIC ..........................................760mW
L = Low
Parameter
Logic 1, High Input Voltage
Logic 0, Low Input Voltage
Input Current
High Output Voltage
Low Output Voltage
Output Resistance
Peak Output Current
Continuous Output Current
Latch-Up Protection
Withstand Reverse Current
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply Current
Power Supply Voltage
H
H
L
A
TC4467 NAND
70 C)
H
H
L
H
H
L
Measured at T
DD
Test Conditions
Note 3
Note 3
0V
I
I
I
Single Output
Total Package
4.5V
Figure 1
Figure 1
Figure 1
Figure 1
Note 2
LOAD
LOAD
OUT
H
L
L
+ 0.3V)
= 10mA, V
V
= 100 A (Note 1)
= 10mA (Note 1)
IN
V
DD
V
A
DD
16V
= +25 C with 4.5V V
Package Thermal Resistance
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operational sections of the specifications is not implied.
Exposure to Absolute Maximum Rating Conditions for extended periods
may affect device reliability.
DD
H
H
H
= 18V
14-Pin CerDIP
14-Pin Plastic DIP R
16-Pin Wide SOIC R
TC4468 AND
H
L
L
H
L
L
V
DD
DD
Min
TELCOM SEMICONDUCTOR, INC.
500
2.4
– 1
4.5
L
L
L
– 0.025
0
R
R
R
R
18V, unless otherwise specified.
LOGIC-INPUT CMOS
J-A ......................................
J-C .........................................
J-A .........................................
J-C .........................................
J-A .........................................
J-C .........................................
H
H
L
TC4469 AND/INV
Typ
1.2
1.5
10
15
15
40
40
QUAD DRIVERS
H
H
L
Max
0.15
V
300
500
0.8
15
25
25
75
75
18
1
4
DD
H
L
L
100 C/W
23 C/W
80 C/W
35 C/W
95 C/W
28 C/W
Unit
V
V
V
V
A
mA
mA
nsec
nsec
nsec
nsec
mA
V
L
L
L
A

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