IRF2907ZS International Rectifier, IRF2907ZS Datasheet

no-image

IRF2907ZS

Manufacturer Part Number
IRF2907ZS
Description
AUTOMOTIVE MOSFET
Manufacturer
International Rectifier
Datasheet
1.IRF2907ZS.pdf (12 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRF2907ZS
Manufacturer:
IR
Quantity:
12 500
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
IRF2907ZSPBF
Manufacturer:
IR
Quantity:
20 000
Company:
H&T Electronics H&T Electronics
Part Number:
IRF2907ZSTRLPBF
Quantity:
9 000
Company:
H&T Electronics H&T Electronics
Part Number:
IRF2907ZSTRPBF
Quantity:
15 863
Features
l
l
l
l
l
Description
Specifically designed for Automotive applications,
this HEXFET
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient
and reliable device for use in Automotive applica-
tions and a wide variety of other applications.
Absolute Maximum Ratings
I
I
I
I
P
V
E
E
I
E
T
T
Thermal Resistance
R
R
R
R
HEXFET
www.irf.com
D
D
D
DM
AR
J
STG
D
GS
AS
AS
AR
θJC
θCS
θJA
θJA
@ T
@ T
@ T
@T
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
(tested)
C
C
C
C
= 25°C
= 100°C
= 25°C
= 25°C
®
is a registered trademark of International Rectifier.
®
Power MOSFET utilizes the latest
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount, steady state)
k
k
Parameter
Parameter
AUTOMOTIVE MOSFET
GS
GS
GS
h
@ 10V (Silicon Limited)
@ 10V (See Fig. 9)
@ 10V
(Package Limited)
TO-220AB
i
IRF2907Z
jk
G
d
300 (1.6mm from case )
HEXFET
See Fig.12a,12b,15,16
Typ.
0.50
–––
–––
–––
10 lbf•in (1.1N•m)
D
S
-55 to + 175
IRF2907ZS
Max.
D
170
120
680
330
± 20
300
690
2.2
75
2
Pak
®
R
IRF2907ZS
IRF2907ZL
Power MOSFET
DS(on)
Max.
0.45
–––
V
IRF2907Z
62
40
DSS
I
D
= 75A
= 4.5mΩ
IRF2907ZL
= 75V
PD - 95872
TO-262
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
‰
1

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IRF2907ZS Summary of contents

Page 1

... PD - 95872 IRF2907Z IRF2907ZS IRF2907ZL ® HEXFET Power MOSFET 75V DSS R = 4.5mΩ DS(on 75A Pak TO-262 IRF2907ZS IRF2907ZL Max. Units 170 A 120 75 680 330 W 2.2 W/°C ± 300 mJ 690 See Fig.12a,12b,15, - 175 °C 300 (1.6mm from case ) 10 lbf• ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 1000 6.0V 5.5V 5.0V BOTTOM 4.5V 100 4.5V 10 ≤ 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 T J ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = 10000 C iss C oss C ...

Page 5

Limited By Package 140 120 100 100 125 Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 ...

Page 6

D.U 20V V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms ...

Page 7

Duty Cycle = Single Pulse 0.01 0.05 10 0.10 1 1.0E-05 1.0E-04 Fig 15. Typical Avalanche Current Vs.Pulsewidth 350 TOP Single Pulse BOTTOM 1% Duty Cycle 300 75A 250 200 150 100 ...

Page 8

SD • Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. D.U.T. ...

Page 9

Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 4 15.24 (.600) 14.84 (.584 14.09 (.555) 13.47 (.530) 3X 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING ...

Page 10

Dimensions are shown in millimeters (inches www.irf.com ...

Page 11

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information www.irf.com IGBT 1- GATE 2- COLLECTOR 3- EMITTER 11 ...

Page 12

Dimensions are shown in millimeters (inches) TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL 10.90 (.429) 10.70 (.421) FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. ...

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