IRF7470 International Rectifier, IRF7470 Datasheet - Page 2

• Manufacturer Part Number: IRF7470
• Description: Power MOSFET(Vdss=40V/ Rds(on)max=13mohm/ Id=10A)
• Manufacturer: International Rectifier

Avalanche Characteristics
Diode Characteristics
IRF7470
Dynamic @ T
Static @ T
Symbol
E
I
V
Symbol
I
I
t
Q
t
Q
V
R
V
Symbol
g
Q
Q
Q
Q
t
t
t
t
C
C
C
I
AR
I
SM
d(on)
d(off)
S
rr
rr
DSS
r
f
GSS
V
AS
fs
SD
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
rr
rr
2
g
gs
gd
oss
(BR)DSS
/ T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
Drain-to-Source Leakage Current
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Forward Voltage
J
Static Drain-to-Source On-Resistance
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy‚
Avalanche Current
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
Min.
–––
–––
–––
–––
–––
–––
–––
–––
0.8
40
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
––– 0.80
––– 0.65
–––
–––
27
–––
–––
0.04
3430 –––
Typ.
14.5
–––
–––
–––
130
150
–––
–––
–––
–––
–––
–––
690
9.0
7.9
8.0
1.9
3.2
72
76
10
29
23
10
21
41
–––
–––
110
200
110
230
–––
–––
–––
–––
–––
–––
–––
1.3
2.3
Max. Units
44
12
12
35
-200
–––
100
200
85
2.0
13
15
30
20
V/°C
m
µA
nA
nC
nC
nC
ns
pF
ns
ns
V
V
S
Typ.
A
V
–––
–––
I
V
Reference to 25°C, I
showing the
p-n junction diode.
T
T
T
di/dt = 100A/µs ƒ
T
di/dt = 100A/µs ƒ
V
V
V
V
V
V
V
V
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
MOSFET symbol
integral reverse
D
D
J
J
J
J
GS
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
GS
DD
GS
GS
DS
G
= 8.0A
= 8.0A
= 25°C, I
= 125°C, I
= 25°C, I
= 125°C, I
= 1.8
= V
= 32V, V
= 32V, V
= 20V, I
= 20V
= 20V
= 0V, I
= 10V, I
= 4.5V, I
= 2.8V, I
= 12V
= -12V
= 4.5V ƒ
= 0V, V
= 20V
= 4.5V ƒ
= 0V
GS
, I
D
S
F
DS
D
D
D
Conditions
D
D
S
F
= 250µA
GS
GS
Conditions
Conditions
= 8.0A, V
= 8.0A, V
= 250µA
= 10A
= 8.0A
= 8.0A, V
= 8.0A, V
= 8.0A
= 5.0A
= 16V
Max.
300
= 0V
= 0V, T
8.0
D
www.irf.com
= 1mA
„
GS
R
J
„
„
GS
= 20V
R
= 125C
=20V
G
= 0V ƒ
= 0V
Units
mJ
A
D
S