IRFP3710 International Rectifier, IRFP3710 Datasheet

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IRFP3710

Manufacturer Part Number
IRFP3710
Description
Power MOSFET
Manufacturer
International Rectifier
Datasheet

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DataSheet
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-247 package is preferred for commercial-
industrial applications where higher power levels
preclude the use of TO-220 devices. The TO-247 is
similar but superior to the earlier TO-218 package
because of its isolated mounting hole.
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
R
D
D
DM
AR
J
STG
D
GS
AS
AR
qJC
qCS
qJA
@ T
@ T
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
@T
4
U
C
C
C
.com
= 25°C
= 100°C
= 25°C
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Peak Diode Recovery dv/dt
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G
Typ.
300 (1.6mm from case )
0.24
–––
–––
HEXFET
10 lbf•in (1.1N•m)
-55 to + 175
D
S
Max.
TO-247AC
180
200
± 20
530
1.3
5.0
57
40
28
20
IRFP3710
®
R
Power MOSFET
DS(on)
V
Max.
www.DataSheet
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www.DataSheet
www.DataSheet
0.75
–––
DSS
40
I
D
PD-91490C
= 57A
= 0.025W
= 100V
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
V
A
A
4U
4U
4U.com
1
.com
.com
.com

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IRFP3710 Summary of contents

Page 1

... Mounting torque, 6- srew Thermal Resistance R Junction-to-Case qJC R Case-to-Sink, Flat, Greased Surface qCS R Junction-to-Ambient qJA www.irf.com 4 DataSheet U .com G Parameter @ 10V GS @ 10V GS Parameter PD-91490C IRFP3710 ® HEXFET Power MOSFET 100V DSS R = 0.025W DS(on 57A D S TO-247AC Max. Units 57 40 180 200 1.3 W/°C ± ...

Page 2

... IRFP3710 Electrical Characteristics @ T V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient /DT DV (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage ...

Page 3

... °C J 1.5 1.0 0 µ 0 IRFP3710 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µ 175° rain-to-S ource V oltage ( Fig 2. Typical Output Characteristics ...

Page 4

... IRFP3710 6000 iss rss 5000 oss 4000 3000 2000 1000 rain-to-S ource V oltage ( Fig 5. Typical Capacitance Vs. www.DataSheet4U.com Drain-to-Source Voltage 5° 25° ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 4 DataSheet U .com 100 125 150 175 ° SINGLE PULSE 0.001 t , Rectangular Pulse Duration (sec) 1 IRFP3710 D.U. 10V Pulse Width £ 1 µs Duty Factor £ 0.1 % Fig 10a. Switching Time Test Circuit V DS ...

Page 6

... IRFP3710 20V t p Fig 12a. Unclamped Inductive Test Circuit t p www.DataSheet4U.com Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 4 DataSheet U .com IVE ...

Page 7

... Duty Factor "D" SD · D.U.T. - Device Under Test Period P.W. Waveform SD Body Diode Forward Current di/dt Waveform DS Diode Recovery dv/dt Body Diode Forward Drop Ripple for Logic Level Devices GS Fig 14. For N-Channel HEXFETS IRFP3710 - + + P. Period * V =10V www.DataSheet www.DataSheet4U www.DataSheet www ...

Page 8

... IRFP3710 Package Outline TO-247AC Outline Dimensions are shown in millimeters (inches) 15.90 (.626) 15.30 (.602 20.30 (.800) 19.70 (.775 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079) 2X 5.45 (.215) 2X www.DataSheet4U.com Part Marking Information TO-247AC WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR FAR EAST: K& ...

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