IRFZ46NSPbF International Rectifier, IRFZ46NSPbF Datasheet

IRFZ46NSPbF

Manufacturer Part Number

IRFZ46NSPbF

Description

HEXFET Power MOSFET

Manufacturer

International Rectifier

Datasheet

1.IRFZ46NSPBF.pdf (10 pages)

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Description

Absolute Maximum Ratings

Thermal Resistance

Advanced HEXFET

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET power MOSFETs are well known

for, provides the designer with an extremely efficient and

reliable device for use in a wide variety of applications.

The D

accommodating die sizes up to HEX-4. It provides the highest

power capability and the lowest possible on-resistance in

any existing surface mount package. The D

for high current applications because of its low internal

connection resistance and can dissipate up to 2.0W in a

typical surface mount application.

The through-hole version (IRFZ46NL) is available for low-

profile applications.

www.irf.com

dv/dt

STG

θJC

θJA

@ T

Advanced Process Technology

Surface Mount (IRFZ46NS)

Low-profile through-hole (IRFZ46NL)

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Lead-Free

Pak is a surface mount power package capable of

= 25°C

= 100°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current …

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt ƒ…

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Junction-to-Case

Junction-to-Ambient ( PCB Mounted,steady-state)**

Power MOSFETs from International

Parameter

Pak is suitable

@ 10V…

IRFZ46NSPbF

IRFZ46NLPbF

300 (1.6mm from case )

Typ.

–––

HEXFET

-55 to + 175

Max.

0.71

180

107

± 20

3.8

5.0

D P ak

DS(on)

Power MOSFET

Max.

1.4

DSS

= 53A

= 0.0165Ω

= 55V

PD - 95158

T O -26 2

04/22/04

Units

W/°C

°C/W

V/ns

°C

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