2SK508 NEC, 2SK508 Datasheet

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2SK508

Manufacturer Part Number
2SK508
Description
HIGH FREQUENCY AMPLIFIER -CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
Manufacturer
NEC
Datasheet

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Document No. D18962EJ2V0DS00 (2nd edition)
(Previous No. TC-1651)
Date Published December 2007 NS
Printed in Japan
<R>
<R>
<R>
DESCRIPTION
admittance, it is suitable for AM tuner, wireless installation and
cordless telephone.
FEATURES
• Low input capacitance
• High forward transfer admittance
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Gate to Drain Voltage
Gate to Source Voltage
Drain to Source Voltage (V
Drain Current (DC)
Gate Current (DC)
Total Power Dissipation
Junction Temperature
Storage Temperature
The 2SK508 is low input capacitance and High forward transfer
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
C
| y
iss
fs
|2 = 26 mS TYP. (V
= 4.8 pF TYP. (V
PART NUMBER
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
2SK508
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
DS
DS
= 5.0 V, I
GS
= 5.0 V, V
= −4.0 V)
HIGH FREQUENCY AMPLIFIER
D
= 10 mA, f = 1.0 MHz)
SC-59 (Mini Mold)
GS
The mark <R> shows major revised points.
PACKAGE
= 0 V, f = 1.0 kHz)
A
JUNCTION FIELD EFFECT TRANSISTOR
= 25°C)
DATA SHEET
V
V
V
T
P
GDO
GSO
I
I
T
DSX
stg
D
G
T
j
−55 to +150
−15
−15
200
150
15
50
5
<R>
mW
mA
mA
°C
°C
V
V
V
PACKAGE DRAWING (Unit: mm)
2
1
2.8 ±0.2
1.5
3
Marking
2SK508
0.65
www.DataSheet4U.com
+0.1
–0.15
1. Drain
2. Source
3. Gate
1985, 2007

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2SK508 Summary of contents

Page 1

... N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR <R> DESCRIPTION The 2SK508 is low input capacitance and High forward transfer admittance suitable for AM tuner, wireless installation and cordless telephone. <R> FEATURES • Low input capacitance C = 4.8 pF TYP 5 iss DS • High forward transfer admittance | TYP ...

Page 2

... 1.0 kHz 5 mA 1.0 MHz iss 5 mA 1.0 MHz rss DS D K52 K53 Data Sheet D18962EJ2V0DS www.DataSheet4U.com 2SK508 MIN. TYP. MAX. UNIT −1 −0.6 −1.4 −3 4.8 pF 1.6 ...

Page 3

... DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE V GATE TO SOURCE CUT-OFF VOLTAGE vs. ZERO GATE VOLTAGE DRAIN CURRENT Zero Gate Voltage Drain Current - mA DSS INPUT AND FEEDBACK CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE V DS Data Sheet D18962EJ2V0DS www.DataSheet4U.com 2SK508 - Drain to Source Voltage - Drain to Source Voltage - V 3 ...

Page 4

... NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). www.DataSheet4U.com 2SK508 M8E 02. 11-1 ...

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