IRLMS1902 International Rectifier, IRLMS1902 Datasheet

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IRLMS1902

Manufacturer Part Number
IRLMS1902
Description
HEXFET Power MOSFET
Manufacturer
International Rectifier
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRLMS1902
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRLMS1902TRPBF
Manufacturer:
MAXIM
Quantity:
48
Part Number:
IRLMS1902TRPBF
Manufacturer:
IR
Quantity:
20 000
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Fifth Generation HEXFET
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET
provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The Micro6 package with its customized leadframe
produces a HEXFET
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and R
reduction enables a current-handling increase of nearly
300% compared to the SOT-23.
www.irf.com
θ
®
power MOSFETs are well known for,
R
®
power MOSFET with R
®
power MOSFETs from

DS(on)
DS(on)
G
D
D
1
2
3
Top View
HEXFET
6
4
5
IRLMS1902
D
S
D
A
Micro6
®
R
Power MOSFET
DS(on)
V
DSS
= 20V
= 0.10Ω
mW/°C
1

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IRLMS1902 Summary of contents

Page 1

... It's unique thermal design and R reduction enables a current-handling increase of nearly 300% compared to the SOT-23. θ www.irf.com Top View DS(on) DS(on)  ‚ „ IRLMS1902 ® HEXFET Power MOSFET 20V DSS 0.10Ω DS(on) Micro6 ...

Page 2

J SM   ‚ ≤ ≤ ≤ ≤ Ω ƒ ≤ „ ƒ ƒ ƒ Ω ƒ Ω ‚ ‚ ≤ ≤ www.irf.com ...

Page 3

VGS TOP 7.50V 5.00V 4.00V 3.50V 3.00V 2.50V 2.00V BOTTOM 1.75V 10 1 20µs PULSE WIDTH 0.1 0 Drain-to-Source Voltage (V) DS 100 ° ...

Page 4

1MHz iss rss gd 500 oss ds gd 400 C iss 300 200 C oss ...

Page 5

Charge Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µF D.U. 3mA Current Sampling Resistors 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 ...

Page 6

Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent Fig 12. For N-channel HEXFET 6 + • • ƒ • - „ • • ...

Page 7

...

Page 8

NOTES : 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 178.00 ( 7.008 ) MAX. NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 8 8mm FEED DIRECTION 9.90 ( .390 ) 8.40 ( .331 ...

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