IRLMS5703 International Rectifier, IRLMS5703 Datasheet - Page 6

• Manufacturer Part Number: IRLMS5703
• Description: HEXFET Power MOSFET
• Manufacturer: International Rectifier

IRLMS5703
V
GS
Re-Applied
Voltage
*
Reverse
Recovery
Current
*
Reverse Polarity of D.U.T for P-Channel
+
-
R
D.U.T
G
***
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
GS
P.W.
SD
DS
= 5.0V for Logic Level and 3V Drive Devices
Peak Diode Recovery dv/dt Test Circuit
Waveform
Waveform
Fig 13. For P-Channel HEXFETS
Ripple
Body Diode
Period
**
Body Diode Forward
+
-
dv/dt controlled by R
I
D.U.T. - Device Under Test
Diode Recovery
5%
SD
Current
controlled by Duty Factor "D"
Circuit Layout Considerations
dv/dt
Forward Drop
di/dt
Current Transformer
Low Stray Inductance
Ground Plane
Low Leakage Inductance
D =
-
G
Period
P.W.
+
[
[
[
V
V
I
SD
GS
DD
]
]
=10V
+
-
V
] ***
DD
*