SI1012R Vishay Siliconix, SI1012R Datasheet - Page 2

• Manufacturer Part Number: SI1012R
• Description: N-Channel 1.8-V (G-S) MOSFET
• Manufacturer: Vishay Siliconix

Si1012R/X
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
1.0
0.8
0.6
0.4
0.2
0.0
0.0
b
Parameter
0.5
V
a
a
DS
Output Characteristics
a
– Drain-to-Source Voltage (V)
1.0
a
V
1.5
GS
= 5 thru 1.8 V
_
2.0
Symbol
V
r
I
DS(on)
DS(on)
t
t
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
Q
g
t
SD
t
fs
gs
gd
r
f
g
2.5
1 V
_
3.0
New Product
I
V
D
DS
^ 200 mA, V
V
DS
= 10 V, V
V
V
V
V
= 16 V, V
V
GS
I
V
GS
GS
V
V
V
V
S
DS
DS
Test Condition
DS
DS
DS
DD
= 150 mA, V
= 1.8 V, I
= 4.5 V, I
= 2.5 V, I
= 10 V, I
= V
= 5 V, V
= 0 V, V
= 16 V, V
= 10 V, R = 47 W
= 10 V, R
GS
GS
GEN
GS
= 4.5 V, I
, I
= 0 V, T
D
D
= 4.5 V, R
D
GS
GS
D
D
= 250 mA
GS
= 500 m A
= 400 mA
L
= 350 m A
GS
= 600 mA
= "4.5 V
= 4.5 V
= 47 W
= 0 V
= 0 V
1200
1000
D
J
800
600
400
200
= 250 mA
= 85_C
0
G
0.0
= 10 W
0.5
V
GS
Transfer Characteristics
Min
0.45
700
– Gate-to-Source Voltage (V)
1.0
T
C
25_C
"0.5
= –55_C
Typ
0.41
0.53
0.70
750
225
0.3
1.0
0.8
75
25
11
5
5
S-02464—Rev. A, 25-Oct-00
1.5
Document Number: 71166
Max
"1.0
0.70
0.85
1.25
100
1.2
5
125_C
2.0
Unit
mA
pC
mA
nA
mA
ns
W
V
S
V
2.5