SI1300BDL Vishay Siliconix, SI1300BDL Datasheet

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SI1300BDL

Manufacturer Part Number
SI1300BDL
Description
N-Channel MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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Notes:
a.
b.
c.
d.
Document Number: 73557
S–52388—Rev. A, 21–Nov–05
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Drain Diode Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
www.DataSheet4U.com
V
Based on T
Surface mounted on 1” x 1” FR4 board.
t = 5 sec
Maximum under steady state conditions is 360 _C/W.
DS
20
20
(V)
C
Ordering Information: Si1300BDL–T1–E3
= 25 _C.
0.85 at V
1.08 at V
G
S
r
DS(on)
1
2
J
SC-70 (3-LEADS)
GS
GS
= 150 _C)
b, d
150 _C)
Parameter
Parameter
= 4.5 V
= 2.5 V
(W)
Top View
N-Channel 20-V (D-S) MOSFET
I
3
D
0.35
0.4
(A)
D
a
Steady State
Q
T
T
T
T
T
T
T
T
T
T
t p 5 sec
A
A
A
A
A
C
C
C
C
C
g
New Product
= 25 _C
= 70 _C
= 25 _C
= 25 _C
= 70 _C
= 25 _C
= 70 _C
= 25 _C
= 25 _C
= 70 _C
335
335
(Typ)
Marking Code
_
KE
XX
Part # Code
Symbol
Symbol
T
R
R
J
V
V
I
P
P
, T
Lot Traceability
and Date Code
DM
I
I
I
I
thJA
thJF
DS
GS
D
D TrenchFETr Power MOSFET
D 100 % R
S
D
stg
g
Typical
Tested
540
450
–55 to 150
0.37
0.30
0.14
0.12
Limit
0.32
0.18
0.14
0.19
"8
0.4
0.5
0.2
20
b, c
b, c
b, c
b, c
G
Maximum
N-Channel MOSFET
Vishay Siliconix
670
570
Si1300BDL
D
S
www.vishay.com
Unit
Unit
_C/W
_C/W
_C
W
W
RoHS
V
V
A
1

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SI1300BDL Summary of contents

Page 1

... 1. 2 SC-70 (3-LEADS Top View Ordering Information: Si1300BDL–T1–E3 Parameter Drain-Source Voltage Gate-Source Voltage = 150 _C) 150 _C) Continuous Drain Current (T Continuous Drain Current (T J Pulsed Drain Current Continuous Source-Drain Diode Current Continuous Source Drain Diode Current Maximum Power Dissipation ...

Page 2

... Si1300BDL Vishay Siliconix www.DataSheet4U.com _ Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a a On-State Drain Current On State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance ...

Page 3

... Q – Total Gate Charge (nC) g Document Number: 73557 S–52388—Rev. A, 21–Nov–05 New Product 1.0 V 2.0 2.5 3.0 1.00 1. 450 600 Si1300BDL Vishay Siliconix Transfer Characteristics curves vs. Temp 0.8 0.6 0 0.2 = 125 – 0.0 0.0 0.5 1.0 1.5 V – Gate-to-Source Voltage (V) ...

Page 4

... Si1300BDL Vishay Siliconix www.DataSheet4U.com Forward Diode Voltage vs. Temp 10.0 1.0 = 150 0.1 0.01 0.001 0.0 0.3 0.6 0.9 V – Source-to-Drain Voltage (V) SD Threshold Voltage 1.0 0.9 0.8 = 250 0.7 0.6 0.5 0.4 0.3 0.2 –50 – – Temperature (_C) J www.vishay.com 4 New Product 1.2 1.5 75 100 125 150 Safe Operating Area 10 *Limited by r DS(on ...

Page 5

... New Product _ –2 – Square Wave Pulse Duration (sec) –2 – Square Wave Pulse Duration (sec) For related documents such as package/tape drawings, part marking, and reliability data, see Si1300BDL Vishay Siliconix Notes Duty Cycle 360 _C/W 2 ...

Page 6

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies ...

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