SI6969DQ Vishay Siliconix, SI6969DQ Datasheet

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SI6969DQ

Manufacturer Part Number
SI6969DQ
Description
Dual P-Channel 1.8-V (G-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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Notes
a.
b.
Document Number: 70828
S-59527—Rev. A, 19-Oct-98
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction to Ambient
Maximum Junction-to-Ambient
V
Surface Mounted on FR4 Board.
t v 10 sec.
DS
- 12
(V)
G
D
S
S
1
1
1
1
1
2
3
4
D
J
J
0.034 @ V
0.050 @ V
0.075 @ V
a, b
a, b
= 150_C)
= 150_C)
a
a
Si6969DQ
TSSOP-8
r
Top View
DS(on)
Dual P-Channel 1.8-V (G-S) MOSFET
Parameter
Parameter
GS
GS
GS
a, b
a, b
(W)
= - 4.5 V
= - 2.5 V
= - 1.8 V
a, b
8
7
6
5
D
S
S
G
2
2
2
2
A
= 25_C UNLESS OTHERWISE NOTED)
I
D
"4.6
"3.8
"3.0
(A)
Steady State
T
T
T
T
t v 10 sec
A
A
A
A
= 25_C
= 70_C
= 25_C
= 70_C
G
1
Symbol
Symbol
D
S
T
1
1
R
R
V
J
V
I
P
P
, T
DM
thJA
I
I
I
GS
DS
D
D
S
D
D
stg
Typical
G
2
115
- 55 to 150
Limit
"4.6
"3.8
- 1.25
"30
0.72
"8
- 12
1.1
Vishay Siliconix
D
S
2
2
Maximum
110
Si6969DQ
www.vishay.com
Unit
Unit
_C/W
_C/W
_C
W
W
V
V
A
A
2-1

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SI6969DQ Summary of contents

Page 1

... 25_C UNLESS OTHERWISE NOTED) A Parameter T = 25_C 70_C 25_C 70_C A Parameter sec Steady State Si6969DQ Vishay Siliconix Symbol Limit " "4 "3.8 "30 ...

Page 2

... Si6969DQ Vishay Siliconix SPECIFICATIONS (T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current Drain-Source On-State Resistance www.DataSheet4U.com a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge ...

Page 3

... Document Number: 70828 S-59527—Rev. A, 19-Oct- thru Gate Charge Si6969DQ Vishay Siliconix Transfer Characteristics 55_C C 25_C 24 125_C 0.0 0.5 1.0 1.5 2.0 2 Gate-to-Source Voltage (V) GS Capacitance 4000 3200 C iss ...

Page 4

... Si6969DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage www.DataSheet4U.com 0.00 0.2 0 Source-to-Drain Voltage (V) SD Threshold Voltage 0.5 = 250 mA I 0.4 D 0.3 0.2 0.1 0.0 - 0 Temperature (_C Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 2-4 = 150_C 25_C J 0.6 0.8 1..0 1.2 1 100 125 ...

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