RN1131MFV TOSHIBA Semiconductor CORPORATION, RN1131MFV Datasheet

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RN1131MFV

Manufacturer Part Number
RN1131MFV
Description
Toshiba Transistor Silicon Npn Epitaxial Type Pct Process
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Driver Circuit Applications
Equivalent Circuit
Absolute Maximum Ratings
Note : Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2131MFV,RN2132MFV
Note:
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characterisstic
RN1131MFV,RN1132MFV
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
(Ta = 25°C)
P
Symbol
C
V
V
V
T
CBO
CEO
EBO
(Note)
I
T
stg
C
j
−55 to 150
Rating
100
150
150
50
50
5
1
Unit
mW
mA
°C
°C
V
V
V
RN1131MFV,RN1132MFV
JEDEC
JEITA
TOSHIBA
Weight: 1.5 g(typ.)
1.15
Land Pattern Example
VESM
0.4
0.5
1
2
0.4
1.2±0.05
0.8±0.05
1.BASE
2.EMITTER
3.COLLECTOR
0.4
2-1L1A
2009-04-14
0.45
Unit: mm
0.45
3
Unit: mm

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RN1131MFV Summary of contents

Page 1

... Rating Unit CBO CEO EBO I 100 (Note) 150 150 °C j −55 to 150 T °C stg 1 RN1131MFV,RN1132MFV Unit: mm 1.2±0.05 0.8±0. 1.BASE VESM 2.EMITTER 3.COLLECTOR JEDEC ― JEITA ― TOSHIBA 2-1L1A Weight: 1.5 g(typ.) Land Pattern Example Unit: mm 0.5 0.45 1.15 0.4 0.45 0.4 0.4 2009-04-14 ...

Page 2

... C h ― 5V 1mA ― 5mA 0.25mA CE (sat ― 10V 1MHz ― ― 2 RN1131MFV,RN1132MFV Min Typ. Max Unit ― ― 100 nA ― ― 100 nA 120 ― 700 ― ― 0.1 0.3 V ― 0.7 ― 100 130 kΩ ...

Page 3

... INPUT VOLTAGE   VI(ON VI(ON) RN1132MFV 100 COMMON EMITTER VCE = 0. 100° 0.1 0 INPUT VOLTAGE   VI(ON RN1131MFV,RN1132MFV RN1131MFV 10000 1000 100 10 100 0 1 INPUT VOLTAGE   VI(OFF RN1132MFV 10000 1000 -25 100 10 100 0 2 INPUT VOLTAGE   VI(OFF VI(OFF) ...

Page 4

... COLLECTOR CURRENT   IC (mA) hFE - IC RN1132MFV 1000 Ta = 100°C 25 100 -25 COMMON EMITTER VCE = COLLECTOR CURRENT   IC (mA) RN1131MFV,RN1132MFV VCE(sat RN1131MFV 1 COMMON EMITTER IC/ 0 100°C 0.01 100 0.1 1 COLLECTOR CURRENT   IC (mA) VCE(sat RN1132MFV 1 COMMON EMITTER IC/ 0 100°C 0.01 100 0.1 COLLECTOR CURRENT   ...

Page 5

... Type Name RN1131MFV X3 X4 RN1132MFV Marking 5 RN1131MFV,RN1132MFV 2009-04-14 ...

Page 6

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. RN1131MFV,RN1132MFV 6 2009-04-14 ...

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