K3659 NEC, K3659 Datasheet

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K3659

Manufacturer Part Number
K3659
Description
Search -----> 2SK3659
Manufacturer
NEC
Datasheet
Document No. D16251EJ2V0DS00 (2nd edition)
Date Published June 2002 NS CP (K)
Printed in Japan
DESCRIPTION
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
ABSOLUTE MAXIMUM RATING (T
Note 1. PW
4.5V drive available.
Low on-state resistance,
Low gate charge,
Built-in gate protection diode.
Avalanche capability ratings.
Isolated TO-220 package.
The 2SK3659 is N-channel MOS FET device that features a
R
Q
Drain to source voltage (V
Gate to source voltage (V
Drain current (DC) (T
Drain current (pulse)
Total power dissipation (T
Total power dissipation (T
Channel temperature
Storage temperature
Single Avalanche Current
Single Avalanche Energy
DS(on)1
G
= 32 nC TYP. (V
2. Starting T
= 5.7 m MAX. (V
10 s, Duty Cycle
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
ch
= 25 C, V
DD
C
Note1
= 16 V, V
= 25°C)
DS
Note2
A
C
GS
GS
Note2
= 25°C)
= 25°C)
= 0 V)
= 10 V, I
= 0 V)
DD
N-CHANNEL POWER MOS FET
GS
= 10 V, R
1%
= 10 V, I
D
A
= 40 A)
I
D(pulse)
= 25
I
V
V
D(DC)
E
P
P
T
G
T
I
DSS
GSS
AS
stg
T1
T2
AS
ch
D
= 25
= 65 A)
°C
SWITCHING
DATA SHEET
)
V
55 to +150
GS
150
122
= 20
2.0
20
260
25
35
MOS FIELD EFFECT TRANSISTOR
20
65
0 V
mJ
W
W
V
V
A
A
A
C
C
ORDERING INFORMATION
PART NUMBER
2SK3659
2SK3659
©
Isolated TO-220
PACKAGE
www.DataSheet4U.com
2002

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K3659 Summary of contents

Page 1

... N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3659 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES 4.5V drive available. Low on-state resistance 5.7 m MAX ...

Page 2

... F(S- di/dt = 100 TEST CIRCUIT 2 SWITCHING TIME D.U. PG Duty Cycle 1% ch Data Sheet D16251EJ2V0DS 2SK3659 www.DataSheet4U.com MIN. TYP. MAX. Unit 1.5 2 4.6 5.7 m 7.1 9.9 m 1700 pF 700 pF 250 ...

Page 3

... TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 150 175 100 ms 100 100 Pulse Width - s Data Sheet D16251EJ2V0DS 2SK3659 www.DataSheet4U.com 50 75 100 125 150 175 T - Case Temperature - 62.5°C/W th(ch- 5°C/W th(ch-C) Single Pulse 100 1000 3 ...

Page 4

... Pulsed = 0.1 0.01 150 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1000 0 Data Sheet D16251EJ2V0DS 2SK3659 www.DataSheet4U.com T = 150°C ch 75°C 25°C 55° Gate to Source Voltage - 150°C ch 75°C 25°C 55°C ...

Page 5

... DYNAMIC INPUT/OUTPUT CHARACTERISTICS 100 Q - Gate Charge - nC G REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 100 10 1 1.5 0 Data Sheet D16251EJ2V0DS 2SK3659 www.DataSheet4U.com MHz C iss C oss C rss 1 10 100 ...

Page 6

... Starting 0.1 0.01 0 Inductive Load - mH 6 SINGLE AVALANCHE ENERGY DERATING FACTOR 100 Starting T - Starting Channel Temperature - C ch Data Sheet D16251EJ2V0DS 2SK3659 www.DataSheet4U.com 100 125 150 ...

Page 7

... The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 4.5 0.2 ± 2.7 0.2 ± EQUIVALENT CIRCUIT Gate Gate Protection 2.5 0.1 Diode ± 0.65 0.1 ± Data Sheet D16251EJ2V0DS 2SK3659 www.DataSheet4U.com Drain Body Diode Source 7 ...

Page 8

... NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). Please check with an NEC sales representative for 2SK3659 www.DataSheet4U.com The M8E 00. 4 ...

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