BZT52-C10S Pan Jit International Inc., BZT52-C10S Datasheet - Page 2

• Manufacturer Part Number: BZT52-C10S
• Description: SURFACE MOUNT SILICON ZENER DIODES
• Manufacturer: Pan Jit International Inc.

NOTE:
1. Tolerance and Type Number Designation. The type numbers listed have a standard tolerance on the nominal zener voltage of ±5%.
2.Specials Available Include:
3.Zener Voltage (V
4. Zener Impedance (Z
5. Surge Current (I
Part Number: BZT52-C2V4S thru BZT52-C39S
ELECTRICAL CHARACTERISTICS (T
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
2
A. Nominal zener voltages between the voltages shown and tighter voltage tolerances.
B. Matched sets.
current (I
wave pulse of 1/120 second duration superimposed on the test current, I
0 0
T Z
T Z
T Z
T Z
T Z
T Z
T Z
T Z
T Z
T Z
T Z
T Z
T Z
T Z
T Z
T Z
T Z
T Z
T Z
T Z
T Z
T Z
T Z
T Z
T Z
T Z
T Z
T Z
T Z
T Z
P
a
2 5
2 5
2 5
2 5
2 5
2 5
2 5
2 5
2 5
2 5
2 5
2 5
2 5
2 5
2 5
2 5
2 5
2 5
2 5
2 5
2 5
2 5
2 5
2 5
2 5
2 5
2 5
2 5
2 5
2 5
t r
m
C -
C -
C -
C -
C -
C -
C -
C -
C -
C -
C -
C -
C -
C -
C -
C -
C -
C -
C -
C -
C -
C -
C -
C -
C -
C -
C -
C -
C -
C -
N
W
ZT
u
2
2
3
3
3
3
4
4
5
5
6
6
7
8
9
0 1
1 1
2 1
3 1
5 1
6 1
8 1
0 2
2 2
4 2
7 2
0 3
3 3
6 3
9 3
t a
m
V
V
S
V
V
V
V
V
V
V
V
V
V
V
V
or I
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
s t
4
7
3
6
9
3
7
1
6
2
8
5
2
1
b
ZK
S
S
S
S
S
S
S
S
S
S
S
S
S
S
r e
R
) is superimposed on I
Z
) Non-Repetitive. The rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equivalent sine
Z
) Measurement. Guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (T
n e
Z
) Derivation. The zener impedance is derived from the 60 cycle ac voltage, which results when an AC current having an rms value equal to 10% of the dc zener
N
r e
o
2
2
3
3
3
4
4
5
6
6
7
8
5
9
0 1
2 1
3 1
5 1
6 1
8 1
0 2
2 2
4 2
7 2
0 3
3 3
6 3
9 3
m
1 1
D
3
3 .
7 .
4 .
7 .
3 .
6 .
9 .
6 .
2 .
8 .
5 .
2 .
o N
1 .
1 .
.
o i
i m
V
d
a n
V
s e
A
Z l
Z
i M
=25
. 2
0 2
2 2
0 1
1 1
2 1
3 1
5 1
6 1
8 1
5 2
ZT
2
2
3
3
4
4
5
5
6
7
8
9
n e
@ I
3
8 2
4 3
7 3
1 3
. n
4
7
8 2
5 .
8 .
4 .
7 .
4 .
8 .
2 .
8 .
4 .
7 .
5 .
4 .
1 .
O
or I
4 .
8 .
8 .
4 .
4 .
8 .
3 .
8 .
8 .
1 .
r e
C unless otherwise noted) V
V
ZT
ZK
o V
.
a t l
M
e g
. 2
1 2
3 2
5 2
8 2
0 1
1 1
2 1
4 1
5 1
7 1
9 1
a
2
3
3
3
4
4
5
6
7
7
8
9
2 3
5 3
8 3
1 4
5
6
. x
2 5
9 .
2 .
5 .
8 .
6 .
4 .
6 .
2 .
9 .
7 .
6 .
1 .
6 .
6 .
7 .
6 .
2 .
3 .
6 .
9 .
1 .
1 .
1 .
V
0 4
0 4
5 8
3 8
5 9
5 9
5 9
5 9
5 9
8 7
0 6
0 1
0 1
5 1
0 2
0 2
5 2
0 3
0 5
0 5
5 5
0 8
0 8
0 8
0 8
0 9
0 9
8
7
7
Z
ZT
F
@ I
M
=1.2V max, I
ZT
x a
, per JEDEC registration; however, actual device capability is as described in Figure 5.
ZT
Z .
m
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
A
n e
r e
F
m I
=100mA for all types.
p
6
5
5
5
5
5
5
5
4
4
2
2
2
2
2
2
2
2
3
1
1
1
1
1
0 5
0 5
0 5
0 7
0 7
0 9
d e
0 8
0 0
0 0
0 0
0 0
0 0
0 0
0 0
0 0
0 0
0 0
0 5
0 1
0 1
0 7
0 7
0 2
0 2
0 2
0 5
0 5
0 5
0 5
0 0
Z
n a
ZK
e c
@ I
ZK
m
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
A
L
1
5
5
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
5 7
0 5
5 2
5 1
0 1
a e
0 0
M
0 .
0 .
1 .
1 .
1 .
1 .
1 .
1 .
1 .
1 .
1 .
1 .
1 .
1 .
1 .
1 .
1 .
1 .
1 .
1 .
1 .
1 .
1 .
1 .
A
I
a k
x a
R
e g
@ V
R
v e
u C
r e
e r r
R
e s
2 2
0
7
8
0 1
2 1
4 1
5 1
7 1
8 1
0 2
5 2
7 2
9 2
1 1
V
2
2
3
5
6
7
9
t n
1
1
1
1
1
1
1
1
8 .
5 .
5 .
5 .
L
T
) at 30
p y
o C
0 -
0 -
0 -
0 -
0 -
0 -
0 -
0 -
a c i
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
i f f e
0 .
0 .
0 .
0 .
0 .
0 .
0 .
0 .
0 .
0 .
0 .
0 .
0 .
0 .
0 .
0 .
0 .
0 .
0 .
0 .
0 .
1 .
0 .
0 .
0 .
0 .
0 .
0 .
0 .
0 .
T
O
T l
C, from the diode body.
C
5 0
0 2
0 3
0 5
5 5
5 6
0 7
5 7
0 8
0 8
0 9
0 9
0 9
0 9
0 9
0 9
0 9
0 9
0 9
0 9
0 1
e i c
5 4
5 7
5 6
0 6
5 5
5 5
0 5
5 3
5 1
m e
t n
. p
P
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
a
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
O
k c
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
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e