TPCF8102 Toshiba Semiconductor, TPCF8102 Datasheet - Page 4

• Manufacturer Part Number: TPCF8102
• Description: Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
• Manufacturer: Toshiba Semiconductor

−10
100
0.1
−5
−4
−3
−2
−1
−8
−6
−4
−2
10
−0.1
0
0
1
0
0
−4.5
Common source
V DS = −10 V
Pulse test
Common source
V DS = −10 V
Pulse test
−5
−0.2
−0.5
Drain-source voltage V
Gate-source voltage V
Ta = 25°C
−2.5
Drain current I
Ta = 100°C
−1
−4
−1.9
−0.4
Ta = 25°C
−1.0
−3
I
I
|Y
D
D
Ta = −55°C
−2
fs
Ta = 100°C
– V
– V
| – I
−1.8
DS
GS
−0.6
−1.5
D
D
Common source
Ta = 25°C Pulse test
−10
GS
Ta = −55°C
DS
(A)
V GS = −1.4 V
(V)
(V)
−0.8
−2.0
−1.7
−1.6
−1.5
−100
−1.0
−2.5
4
1000
−0.5
−0.4
−0.3
−0.2
−0.1
−10
100
−8
−6
−4
−2
10
−0.1
0
0
1
0
0
Common source
Ta = 25°C
Pulse test
−2.5
−4
−3
−1
−2
Drain-source voltage V
Gate-source voltage V
−5
−2
Drain current I
−1
R
−2
V
−4
DS (ON)
−1.8 V
I
DS
D
– V
– V
V GS = −4.5 V
DS
GS
– I
−3
−6
D
−2.5 V
Common source
Ta = 25°C Pulse test
D
−10
Common source
Ta = 25°C
Pulse test
GS
DS
(A)
V GS = −1.4 V
(V)
(V)
−4
−8
I D = −6 A
TPCF8102
−1.8
−1.7
−1.6
−1.5
−1.5 A
2004-07-06
−3 A
−1.9
−100
−10
−5