UPD16837 NEC, UPD16837 Datasheet

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UPD16837

Manufacturer Part Number
UPD16837
Description
MONOLITHIC QUAD H BRIDGE DRIVER
Manufacturer
NEC
Datasheet

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Part Number:
UPD16837
Manufacturer:
NEC
Quantity:
1 000
Document No. S12764EJ1V0DS00 (1st edition)
Date Published January 1998 N CP(K)
Printed in Japan
DESCRIPTION
in the output stage lower the saturation voltage and power consumption as compared with conventional drivers using bipolar
transistors.
the supply voltage drops. A 30-pin plastic shrink SOP package is adopted to help create compact and slim application sets.
channels for driving sled motors and loading motors are provided, making the product ideal for applications in CD-ROM
and DVD.
FEATURES
• Four H bridge circuits employing power MOS FETs
• High-speed PWM drive: Operating frequency: 120 kHz MAX.
• Low-voltage malfunction prevention circuit: Operating voltage: 2.5 V (TYP.)
• 30-pin shrink SOP (300 mil)
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Control block supply voltage
Output block supply voltage
Input voltage
H bridge drive current
Power dissipation
Operating temperature range
Peak junction temperature
Storage temperature range
PD16837GS
The PD16837 is a monolithic quad H bridge driver employing power MOS FETs in the output stage. The MOS FETs
In addition, a low-voltage malfunction prevention circuit is also provided that prevents the IC from malfunctioning when
In the output stage H bridge circuits, two low-ON resistance H bridge circuits for driving actuators, and another two
Notes 1. When only one channel operates.
Part Number
2. When mounted on a glass epoxy board (100 mm
Parameter
Note 2
Note 1
30-pin plastic SSOP (300 mil)
MONOLITHIC QUAD H BRIDGE DRIVER
The information in this document is subject to change without notice.
Package
A
T
Symbol
I
DR (pulse)
= 25 C)
CH (MAX)
V
T
V
V
P
T
DD
stg
IN
M
A
T
DATA SHEET
PW
5 ms, Duty
Conditions
100 mm
MOS INTEGRATED CIRCUIT
30 %
1 mm)
–0.5 to V
PD16837
–55 to +150
–0.5 to +7.0
–0.5 to +15
0 to 75
Rating
1.25
150
1.0
DD
+ 0.5
©
A/phase
Unit
W
V
V
V
C
C
C
1998

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UPD16837 Summary of contents

Page 1

MONOLITHIC QUAD H BRIDGE DRIVER DESCRIPTION The PD16837 is a monolithic quad H bridge driver employing power MOS FETs in the output stage. The MOS FETs in the output stage lower the saturation voltage and power consumption as compared with ...

Page 2

RECOMMENDED OPERATING RANGE Parameter Symbol Control block supply voltage V Output block supply voltage H bridge drive current I DR (pulse) Operating frequency Operating temperature range Peak junction temperature Notes 1. The low-voltage malfunction prevention circuit operates when V (2.5 ...

Page 3

ELECTRICAL CHARACTERISTICS ( and the other parameters are within their recommended operating ranges as described above A unless otherwise specified. The parameters other than changes in delay time are when the current is ON. ch1, ...

Page 4

TYPICAL CHARACTERISTICS P vs. T Characteristics 1. 100 °C 100 Ambient temperature vs. V Characteristics ...

Page 5

I vs. T Characteristics DD A 100 Ambient temperature T (° vs. T Characteristics 0.8 0.6 0.4 0 Ambient temperature ...

Page 6

T Characteristics (chs 1 and 4) PLH PHL A 300 250 200 150 100 Ambient temperature vs. T Characteristics (chs 1 and 4) PLH PHL A 100 80 ...

Page 7

PACKAGE DIMENSION 30-PIN SHRINK SOP (300 mil) (unit: mm 13.0 MAX. 0.8 +0.10 0.35 0.10 M –0.05 16 detail of lead end 15 7.7 0.3 5.6±0.2 0.9 MAX. 0.6 0.2 0.10 PD16837 1.05 0.2 7 ...

Page 8

... Control circuit SEL Control circuit SEL 30 4 GND 4 LVP Remark Connect all V and GND pins Internally pulled down to GND via bridge 1 H bridge 2 H bridge 3 H bridge 4 PD16837 PGND ...

Page 9

FUNCTION TABLE V (common SEL 1, 4 GND (common) V (common SEL 2, 3 GND (common ...

Page 10

ABOUT SWITCHING When output A is switched as shown in the figure on the right, a dead time (time during which both P ch and N ch are OFF) elapses to prevent through current. Therefore, the waveform of output A ...

Page 11

... GND wiring and inductance and degrade the performance of the IC. On the PWB, keep the pattern width of the V and insert the bypass capacitors between V possible. Connect a low-inductance magnetic capacitor (4700 pF or more) and an electrolytic capacitor so, depending on the load current, in parallel. PD16837 and GND lines as wide and short as possible, ...

Page 12

... Solder this product under the following recommended conditions. For details of the recommended soldering conditions, refer to information document Semiconductor Device Mounting Technology Manual (C10535E). For soldering methods and conditions other than those recommended, consult NEC. Soldering Method Infrared reflow Package peak temperature: 235 C; Time: 30 secs. max. (210 C min.); ...

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PD16837 13 ...

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PD16837 ...

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PD16837 15 ...

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... Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance ...

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