BFT25 Philips Semiconductors, BFT25 Datasheet
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BFT25
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BFT25 Summary of contents
Page 1
... DISCRETE SEMICONDUCTORS DATA SHEET BFT25 NPN 2 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 November 1992 ...
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... C amb mA 500 MHz amb CONDITIONS open emitter open base open collector f 1 MHz 167 C; note Product specification BFT25 3 fpage 1 2 Top view MSB003 Fig.1 SOT23. TYP. MAX. UNIT 6 2.3 GHz ...
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... 500 MHz amb mA 500 MHz amb is zero and – Product specification THERMAL RESISTANCE = 167 C; note 1 MIN. TYP 1.2 2 5.5 3.8 BFT25 260 K/W MAX. UNIT 50 nA GHz 0.6 pF 0 ...
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... I (mA Fig.5 4 Product specification MEA914 ( Collector capacitance as a function of collector-base voltage. –2 – (mA opt 500 MHz amb Minimum noise figure as a function of collector current. BFT25 10 MEA909 10 ...
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... amb Fig.7 Common emitter forward transmission coefficient (S November 1992 1 0.5 0.2 0 120 500 800 MHz 150 200 150 120 90 5 Product specification 200 10 500 800 MHz 5 2 MEA916 ). MEA918 ). 21 BFT25 ...
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... mA amb Fig.9 Common emitter output reflection coefficient (S November 1992 90 120 150 200 150 120 90 1 0.5 0.2 0.2 0.5 1 0.2 0 Product specification 60 800 MHz 30 500 0.05 0.1 0. MEA917 ). 200 10 500 5 800 MHz 2 MEA915 ). 22 BFT25 ...
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... OUTLINE VERSION IEC SOT23 November 1992 scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES JEDEC EIAJ 7 Product specification detail 0.45 0.55 0.2 0.1 0.15 0.45 EUROPEAN PROJECTION BFT25 SOT23 ISSUE DATE 97-02-28 ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November 1992 8 Product specification BFT25 ...