BFT93W Philips Semiconductors, BFT93W Datasheet - Page 2

• Manufacturer Part Number: BFT93W
• Description: PNP 4 GHz wideband transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
It is intended as a general purpose
transistor for wideband applications
up to 2 GHz.
QUICK REFERENCE DATA
Note
1. T
March 1994
V
V
I
P
h
C
f
G
F
T
SYMBOL
C
T
FE
j
High power gain
Gold metallization ensures
excellent reliability
SOT323 (S-mini) package.
CBO
CEO
tot
re
PNP 4 GHz wideband transistor
UM
s
is the temperature at the soldering point of the collector pin.
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral power gain I
noise figure
junction temperature
PARAMETER
DESCRIPTION
Silicon PNP transistor in a plastic,
SOT323 (S-mini) package. The
BFT93W uses the same crystal as the
SOT23 version, BFT93.
PINNING
PIN
1
2
3
open emitter
open base
up to T
I
I
I
f = 500 MHz
f = 500 MHz; T
I
f = 500 MHz
C
C
C
C
C
= 30 mA; V
= 0; V
= 30 mA; V
= 30 mA; V
= 10 mA; V
base
emitter
collector
s
= 93 C; note 1
CE
CONDITIONS
DESCRIPTION
= 5 V; f = 1 MHz
2
amb
CE
CE
CE
CE
= 5 V
= 5 V;
= 5 V;
= 5 V;
= 25 C
20
MIN.
handbook, 2 columns
BFT93W Marking code: X1.
50
1
4
15.5
2.4
Top view
TYP.
Fig.1 SOT323.
Product specification
1
300
150
15
12
50
MAX.
3
BFT93W
MBC870
2
V
V
mA
mW
pF
GHz
dB
dB
C
UNIT