STS11NF3LL ST Microelectronics, STS11NF3LL Datasheet
STS11NF3LL
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STS11NF3LL Summary of contents
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... Drain Current (pulsed otal Dissipation tot Pulse width limited by safe operating area May 2000 INTERNAL SCHEMATIC DIAGRAM = 100 STS11NF3LL - 11A SO-8 POWER MOSFET PRELIMINARY DATA SO-8 Value 2.5 W 1/6 ...
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... STS11NF3LL THERMAL DATA R (*)Thermal Resistance Junction-ambient thj -amb T Maximum Operating Junction T emperature j T Storage Temperature s tg (*) Mounted on FR-4 board (t sec) ELECTRICAL CHARACTERISTICS (T OFF Symbo l Parameter V Drain-source (BR)DSS Breakdown Voltage I Zero Gate Voltage DSS Drain Current ( Gate-body Leakage GSS Current ( ...
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... (Resistive Load, see fig.3) Test Con ditions di/dt = 100 150 (Resistive Load, see fig.5) STS11NF3LL Min. Typ. Max. Unit Min. Typ. Max. Unit Min. ...
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... STS11NF3LL Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/6 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...
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... MIN. TYP 0 0.65 b 0.35 b1 0. 4.8 E 5.8 e 1.27 e3 3.81 F 3 inch MAX. MIN. TYP. 1.75 0.25 0.003 1.65 0.85 0.025 0.48 0.013 0.25 0.007 0.5 0.010 45 (typ.) 5.0 0.188 6.2 0.228 0.050 0.150 4.0 0.14 1.27 0.015 0.6 8 (max.) STS11NF3LL MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 0.196 0.244 0.157 0.050 0.023 0016023 5/6 ...
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... STS11NF3LL Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...