STS1HNC60 ST Microelectronics, STS1HNC60 Datasheet

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STS1HNC60

Manufacturer Part Number
STS1HNC60
Description
N-CHANNEL PowerMESH MOSFET
Manufacturer
ST Microelectronics
Datasheet

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STS1HNC60
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Part Number:
STS1HNC60
Manufacturer:
ST
0
DESCRIPTION
Using the latest high voltage MESH OVERLAY™II
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprietary edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
July 2001
STS1HNC60
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
SWITCH MODE LOW POWER SUPPIES
(SMPS)
CFL
Symbol
dv/dt(1)
I
V
DM
P
V
V
T
DGR
I
I
TOT
T
stg
DS
GS
D
D
TYPE
j
( )
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuos) at T
Drain Current (continuos) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
DS
(on) = 7
600 V
V
DSS
R
< 8
DS(on)
C
GS
Parameter
= 25°C
GS
= 20 k )
= 0)
C
C
0.36 A
= 25°C
= 100°C
I
D
N-CHANNEL 600V - 7 - 0.4A SO-8
(1)I
SD
INTERNAL SCHEMATIC DIAGRAM
0.36 A, di/dt 100A/µs, V
PowerMesh™II MOSFET
–65 to 150
SO-8
Value
0.028
± 30
0.36
0.22
1.44
STS1HNC60
600
600
150
2.5
3.5
DD
V
(BR)DSS
PRELIMINARY DATA
, T
j
T
JMAX.
W/°C
V/ns
Unit
°C
°C
W
V
V
V
A
A
A
1/6

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STS1HNC60 Summary of contents

Page 1

... July 2001 N-CHANNEL 600V - 7 - 0.4A SO DS(on) D < 8 0.36 A INTERNAL SCHEMATIC DIAGRAM Parameter = 25° 100° 25°C C (1)I SD STS1HNC60 PowerMesh™II MOSFET PRELIMINARY DATA SO-8 Value 600 600 ± 30 0.36 0.22 1.44 2.5 0.028 3.5 –65 to 150 150 0.36 A, di/dt 100A/µ (BR)DSS Unit V ...

Page 2

... STS1HNC60 THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient Max (Surface Mounted) T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS (starting ° ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) ...

Page 3

... 1 4 10V G GS (see test circuit, Figure 5) Test Conditions 1.4 A, di/dt = 100A/µ 100V 150° (see test circuit, Figure 5) STS1HNC60 Min. Typ. Max. Unit 8.5 11.5 nC 2.8 nC 2.8 nC Min. Typ. Max. Unit Min ...

Page 4

... STS1HNC60 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/6 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 5

... MIN. TYP 0 0.65 b 0.35 b1 0. 4.8 E 5.8 e 1.27 e3 3.81 F 3 inch MAX. MIN. TYP. 1.75 0.25 0.003 1.65 0.85 0.025 0.48 0.013 0.25 0.007 0.5 0.010 45 (typ.) 5.0 0.188 6.2 0.228 0.050 0.150 4.0 0.14 1.27 0.015 0.6 8 (max.) STS1HNC60 MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 0.196 0.244 0.157 0.050 0.023 0016023 5/6 ...

Page 6

... STS1HNC60 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

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