STS1NC60 ST Microelectronics, STS1NC60 Datasheet

no-image

STS1NC60

Manufacturer Part Number
STS1NC60
Description
N-CHANNEL PowerMESH MOSFET
Manufacturer
ST Microelectronics
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STS1NC60
Manufacturer:
DENSO
Quantity:
6 218
Part Number:
STS1NC60
Manufacturer:
ST
0
Part Number:
STS1NC60Z
Manufacturer:
ST
0
DESCRIPTION
The PowerMESH
generation of MESH OVERLAY
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
.
July 2001
STS1NC60
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
AC ADAPTORS AND BATTERY CHARGERS
SWITH MODE POWER SUPPLIES (SMPS)
dv/dt (1)
Symbol
I
V
DM
P
V
V
T
DGR
I
I
TOT
T
stg
DS
GS
D
D
TYPE
j
( )
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuos) at T
Drain Current (continuos) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
DS
(on) = 12
600 V
V
II is the evolution of the first
DSS
R
< 15
DS(on)
C
™.
GS
Parameter
= 25°C
GS
= 20 k )
The layout re-
= 0)
C
C
N-CHANNEL 600V - 12 - 0.3A - SO-8
= 25°C
= 100°C
0.3 A
I
D
(1)I
SD
INTERNAL SCHEMATIC DIAGRAM
0.3A, di/dt 100A/µs, V
PowerMESH™II MOSFET
–60 to 150
Value
SO-8
0.18
0.02
DD
600
600
±30
150
0.3
1.2
2.5
3
STS1NC60
V
(BR)DSS
, T
j
T
JMAX
W/°C
V/ns
Unit
°C
°C
W
V
V
V
A
A
A
1/8

Related parts for STS1NC60

Related keywords