SSM3K02F Toshiba Semiconductor, SSM3K02F Datasheet - Page 2

• Manufacturer Part Number: SSM3K02F
• Description: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
• Manufacturer: Toshiba Semiconductor

Electrical Characteristics
Switching Time Test Circuit
Precaution
product. For normal switching operation, V
voltage than V
V
(Relationship can be established as follows: V
Please take this into consideration for using the device.
V
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Note: Pulse test
th
GS
can be expressed as voltage between gate and source when low operating current value is I
recommended voltage of 2.5 V or higher to turn on this product.
Characteristics
th
.
Turn-on time
Turn-off time
(Ta = = = = 25°C)
V
R
Symbol
(BR) DSS
DS (ON)
ïY
I
I
C
C
C
GSS
DSS
V
t
t
oss
on
off
iss
rss
GS (ON)
th
fs
ï
GS (off)
V
I
V
V
V
I
I
V
V
V
V
V
D
D
D
requires higher voltage than V
GS
DS
DS
DS
DS
DS
DS
DD
GS
= 1 mA, V
= 0.5 A, V
= 0.5 A, V
= ±10 V, V
= 30 V, V
= 3 V, I
= 3 V, I
= 10 V, V
= 10 V, V
= 10 V, V
= 15 V, I
= 0~2.5 V, R
< V
2
th
< V
D
D
Test Condition
GS
GS
GS
D
= 0.1 mA
= 0.5 A
GS
GS
GS
GS
DS
= 0.5 A,
GS (ON)
= 0
= 4 V
= 2.5 V
G
= 0
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0
= 4.7 W
)
(Note)
(Note)
(Note)
th
and V
Min
0.6
1.5
¾
30
¾
¾
¾
¾
¾
¾
¾
¾
GS (off)
Typ.
140
180
115
24
60
52
80
¾
¾
¾
¾
¾
D =
requires lower
SSM3K02F
100 mA for this
2003-03-27
Max
200
250
1.1
±5
¾
¾
¾
¾
¾
¾
¾
1
Unit
mW
mA
mA
pF
pF
pF
ns
V
V
S