SSM3K15TE Toshiba Semiconductor, SSM3K15TE Datasheet
SSM3K15TE
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SSM3K15TE Summary of contents
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... V GSS DC I 100 D Pulse I 200 DP P 100 D T 150 ch −55~150 T stg Equivalent Circuit SSM3K15TE 1.2±0.05 0.8±0.05 １ ２ Unit V 1. Gate V 2. Source 3. Drain mA TESM mW JEDEC - °C JEITA - °C TOSHIBA 2-1B1B Weight: 0.0022 g (typ.) 2007-11-01 Unit: mm ３ ...
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... 0 off ( Output OUT requires higher voltage than V GS (on) < V < (off (on) 2 SSM3K15TE Min Typ. Max ⎯ ⎯ ±1 ⎯ ⎯ 30 ⎯ ⎯ 1 ⎯ 0.8 1.5 ⎯ ⎯ 25 ⎯ 2.2 4.0 ⎯ 4.0 7.0 ⎯ ⎯ ...
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... Ta = 25°C 2.7 2 1.5 2 (V) DS – Common Source Ta = 25°C 120 160 200 (mA) D – 100 125 150 3 SSM3K15TE I – 1000 Common Source 100 Ta = 100°C 10 −25°C 25°C 1 0.1 0. Gate-Source voltage V ( – V ...
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... Common Source 0 25°C 10 100 (mA Common Source MHz Ta = 25°C C iss C oss C rss 10 100 ( SSM3K15TE I – 250 Common Source 25°C 200 150 G S 100 50 0 −0.2 −0.4 −0.6 − ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 SSM3K15TE 20070701-EN GENERAL 2007-11-01 ...