AO4709 Alpha & Omega Semiconductors, AO4709 Datasheet
AO4709
Related parts for AO4709
AO4709 Summary of contents
Page 1
... AO4709 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO4709 uses advanced trench technology to provide excellent R and low gate charge. A Schottky diode is DS(ON) provided to facilitate the implementation of non- synchronous DC-DC converters. Standard Product AO4709 is Pb-free (meets ROHS & Sony 259 specifications) ...
Page 2
... AO4709 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...
Page 3
... AO4709 P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 -4.5V -10V -6V 25 -5V 20 -4V 15 -3. (Volts) DS Fig 1: On-Region Characteristics =-4. (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25° ...
Page 4
... AO4709 P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =-15V (nC) g Figure 7: Gate-Charge Characteristics 100.0 T =150°C, T =25°C J(Max DS(ON) 10.0 limited 0.1s 10ms 1.0 1s 10s DC 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 ...
Page 5
... AO4709 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY 10 125°C 1 0.1 0.01 25°C 0.001 0.0 0.2 0.4 0.6 V (Volts) F Figure 12: Schottky Forward Characteristics 0.7 0.6 0.5 0.4 I =1A F 0.3 0.2 0 Temperature (°C) Figure 14: Schottky Forward Drop vs. Junction Temperature 10 D θJA J, =40°C/W θJA 1 0.1 0.01 0.00001 0.0001 Figure 15: Schottky Normalized Maximum Transient Thermal Impedance Alpha & ...