AO4824 Alpha & Omega Semiconductors, AO4824 Datasheet

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AO4824

Manufacturer Part Number
AO4824
Description
Dual N-Channel Enhancement Mode Field Effect Transistor
Manufacturer
Alpha & Omega Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AO4824
Manufacturer:
AOS
Quantity:
2 600
Part Number:
AO4824
Manufacturer:
AOS/万代
Quantity:
20 000
Part Number:
AO4824L
Manufacturer:
AOS/ 万代
Quantity:
20 000
Part Number:
AO4824L/
Manufacturer:
AO
Quantity:
20 000
Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Parameter: Thermal Characteristics MOSFET Q1
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
Parameter: Thermal Characteristics MOSFET Q2
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
AO4824
Asymmetric Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO4824 uses advanced trench technology to
provide excellent R
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in DC-
DC converters. Standard Product AO4824 is Pb-free
(meets ROHS & Sony 259 specifications). AO4824L
is a Green Product ordering option. AO4824 and
AO4824L are electrically identical.
A
S2
G2
S1
G1
SOIC-8
1
2
3
4
DS(ON)
B
T
T
T
T
8
7
6
5
A
A
A
A
=25°C
=70°C
=25°C
=70°C
and low gate charge. The
D2
D2
D1
D1
C
C
A
A
A
A
A
=25°C unless otherwise noted
Steady-State
Steady-State
Steady-State
Steady-State
t ≤ 10s
t ≤ 10s
Symbol
V
V
I
I
P
T
Symbol
Symbol
D
DM
G1
J
DS
GS
D
, T
Features
Q1
V
I
R
R
R
R
R
R
D
DS
DS(ON)
DS(ON)
STG
θJA
θJA
θJL
θJL
= 8.5A
(V) = 30V
D1
S1
< 17mΩ
< 27mΩ
-55 to 150
Max Q1
1.28
Typ
Typ
±20
8.5
6.8
30
30
48
74
35
48
74
35
2
G2
V
I
D
<13mΩ
<15mΩ
DS
=9.8A
Q2
(V) = 30V
Max Q2
D2
S2
-55 to 150
1.28
62.5
62.5
Max
Max
±12
110
110
9.8
7.8
30
40
40
40
2
(V
(V
(V
GS
GS
GS
= 10V)
= 10V)
= 4.5V)
Units
Units
°C/W
Units
°C/W
°C
W
V
V
A

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AO4824 Summary of contents

Page 1

... The DS(ON) two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC- DC converters. Standard Product AO4824 is Pb-free (meets ROHS & Sony 259 specifications). AO4824L is a Green Product ordering option. AO4824 and AO4824L are electrically identical. SOIC ...

Page 2

... AO4824 Q1 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter BV STATIC PARAMETERS DSS Drain-Source Breakdown Voltage I Zero Gate Voltage Drain Current DSS I GSS Gate-Body leakage current V GS(th) Gate Threshold Voltage I D(ON) On state drain current R Static Drain-Source On-Resistance DS(ON Forward Transconductance V SD Diode Forward Voltage ...

Page 3

... AO4824 Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 4V 10V 25 4. (Volts) DS Fig 1: On-Region Characteristics (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25° (Volts Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & ...

Page 4

... AO4824 Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =15V DS I =8. (nC) g Figure 7: Gate-Charge Characteristics 100.0 R DS(ON) limited 1ms 10.0 10ms 0.1s 1 =150°C J(Max) T =25°C A 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note ...

Page 5

... AO4824 Q2 Electrical Characteristics (T Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage SD Maximum Body-Diode Continuous Current ...

Page 6

... AO4824 Q2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 10V 4. (Volts) DS Fig 1: On-Region Characteristics 13 V =4. =10V (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Volts) GS Figure 5: On resistance vs. Gate-Source Voltage Alpha & ...

Page 7

... AO4824 Q2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V =15V DS I =9. (nC) g Figure 7: Gate-Charge Characteristics 100.0 T =150°C, T =25°C J(Max DS(ON) limited 1ms 10.0 10ms 0.1s 1.0 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note ...

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