CPH6312 Sanyo Semicon Device, CPH6312 Datasheet - Page 2

• Manufacturer Part Number: CPH6312
• Description: High-Speed Switching Applications
• Manufacturer: Sanyo Semicon Device

Continued from preceding page.
Switching Time Test Circuit
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
140
120
100
--
--
--
--
--
--
80
60
40
20
6
5
4
3
2
1
0
0
0
0
--1.5A
--
Parameter
--10V
--
0.1
PW=10 s
D.C. 1%
2
P.G
0V
I D = --3.0A
--
V IN
--
Drain-to-Source Voltage, V DS -- V
0.2
Gate-to-Source Voltage, V GS -- V
4
--
--
0.3
V IN
R DS (on) -- V GS
6
50
--
G
I D -- V DS
--
0.4
8
--
--
0.5
V DD = --15V
10
D
--
S
--
0.6
12
Symbol
R L =5
I D = --3A
t d (on)
t d (off)
Coss
Ciss
Crss
V SD
Qgs
Qgd
Qg
CPH6312
t r
t f
--
--
0.7
14
V OUT
--
--
0.8
16
Ta=25 C
V DS =- -10V, f=1MHz
V DS =- -10V, f=1MHz
V DS =- -10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
V DS =- -10V, V GS =--10V, I D =--5A
V DS =- -10V, V GS =--10V, I D =--5A
V DS =- -10V, V GS =--10V, I D =--5A
I S =--5A, V GS =0
--
--
IT03143
0.9
IT03141
18
CPH6312
--
--
1.0
20
Conditions
140
120
100
--
--
--
--
--
--
--
--
80
60
40
20
0
8
7
6
5
4
3
2
1
0
--60
0
V DS = --10V
--40
--
0.5
--20
Gate-to-Source Voltage, V GS -- V
--
Ambient Temperature, Ta -- C
1.0
0
min
R DS (on) -- Ta
--
20
1.5
I D -- V GS
40
Ratings
--
--0.83
16.5
770
155
100
2.5
2.5
2.0
10
58
58
47
typ
60
--
2.5
80
max
--1.5
100
--
3.0
120
No.6934-2/4
--
3.5
Unit
140
IT03142
IT03144
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
--
160
4.0