HAT2040R Hitachi Semiconductor, HAT2040R Datasheet - Page 3

• Manufacturer Part Number: HAT2040R
• Description: Silicon N Channel Power MOS FET Power Switching
• Manufacturer: Hitachi Semiconductor

Electrical Characteristics (Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source leak current
Zero gate voltege drain
current
Gate to source cutoff voltage V
Static drain to source on state R
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance Crss
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward
voltage
Body–drain diode reverse
recovery time
Note:
3. Pulse test
Symbol
V
I
I
R
|y
Ciss
Coss
Qg
Qgs
Qgd
t
t
t
t
V
t
GSS
DSS
d(on)
r
d(off)
f
rr
(BR)DSS
GS(off)
DF
DS(on)
DS(on)
fs
|
Min
30
—
—
1.0
—
—
18
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
6.2
9.0
30
4400
950
400
90
15
18
110
440
160
170
0.9
55
Max
—
1
2.5
8.0
13.0
—
—
—
—
—
—
—
—
—
—
—
1.17
—
0.1
Unit
V
V
m
m
S
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
ns
A
A
Test Conditions
I
V
V
V
I
I
I
V
V
f = 1MHz
V
V
I
V
V
IF = 15A, V
IF = 15A, V
diF/ dt =20A/ s
D
D
D
D
D
GS
DS
DS
DS
GS
DD
GS
GS
DD
= 10mA, V
= 8A, V
= 8A, V
= 8A, V
= 15A
= 30 V, V
= 10V, I
= 10V
= 10V
= 20V, V
= 0
= 10V
= 4V, I
10V
GS
GS
DS
D
GS
GS
HAT2040R
= 10V
= 8A
= 10V
= 4V
D
GS
GS
= 0
= 0
DS
= 1mA
= 0
= 0
= 0
Note3
Note3
Note3
Note3
3