HAT2064R Hitachi Semiconductor, HAT2064R Datasheet - Page 6

• Manufacturer Part Number: HAT2064R
• Description: Silicon N Channel Power MOS FET Power Switching
• Manufacturer: Hitachi Semiconductor

HAT2064R
6
100
20
50
10
50
40
30
20
10
0
0.1
V
I
DS
D
Reverse Drain Current
0.2
Dynamic Input Characteristics
= 16 A
20
Body Drain Diode Reverse
Gate Charge
0.5
Recovery Time
40
V
DD
1
di/dt = 50 A/ s
V
V
= 25 V
GS
GS
10 V
2
60
5 V
= 0, Ta = 25 C
Qg (nc)
V
DD
I
5
DR
80
= 25 V
10
10 V
5 V
(A)
100
20
20
16
12
8
4
0
10000
3000
1000
300
100
200
100
30
10
50
20
10
5
2
0.1
0
t
V
Rg = 4.7
d(on)
Drain to Source Voltage V
GS
0.2
10
= 10 V , V
Switching Characteristics
Typical Capacitance vs.
Drain to Source Voltage
Drain Current
0.5
, duty < 1 %
20
DS
1
Coss
Crss
Ciss
= 10 V
2
30
I
t f
D
V
f = 1 MHz
r t
t
5
d(off)
GS
(A)
40
DS
10
= 0
(V)
50
20