HAT2070R Renesas Technology, HAT2070R Datasheet - Page 5

• Manufacturer Part Number: HAT2070R
• Description: Silicon N Channel Power MOS FET Power Switching
• Manufacturer: Renesas Technology

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HAT2070R
Rev.4.00 Sep 07, 2005 page 5 of 6
Vin
10 V
Vin Monitor
Rg
Switching Time Test Circuit
0.0001
0.001
0.01
0.1
10
10 µ
1
D = 1
0.5
D.U.T.
100 µ
Normalized Transient Thermal Impedance vs. Pulse Width
R
L
V
= 10 V
DS
1 m
Vout
Monitor
50
40
30
20
10
0
0
Source to Drain Voltage
10 m
Reverse Drain Current vs.
0.4
Source to Drain Voltage
Pulse Width PW (S)
5 V
100 m
10 V
0.8
1.2
t d(on)
V
GS
1
Vout
Vin
P
θch – f (t) = γ s (t) • θch – f
θch – f = 83.3°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
DM
=
0
Pulse Test
V
1.6
SD
10
Switching Time Waveform
10%
10%
(V)
PW
2.0
90%
T
t r
100
D =
t d(off)
1000
90%
PW
T
10000
90%
10%
t f