HAT2108R Renesas Technology, HAT2108R Datasheet
HAT2108R
Related parts for HAT2108R
HAT2108R Summary of contents
Page 1
www.DataSheet4U.com ...
Page 2
... The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination ...
Page 3
... Silicon N Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 2.5 V gate drive • Low drive current • High density mounting Outline SOP HAT2108R Drain ...
Page 4
... HAT2108R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body–drain diode reverse drain current I Channel dissipation Channel dissipation Channel temperature Storage temperature Notes ≤ 10 µs, duty cycle ≤ Drive operation : When using the glass epoxy board (FR4 1.6 mm), PW≤ 10s 3. 2 Drive operation : When using the glass epoxy board (FR4 1.6 mm), PW≤ ...
Page 5
... V — 0.85 1. — 40 — rr HAT2108R Unit Test Conditions mA ±100 µ µ ± µ ...
Page 6
... HAT2108R Package Dimensions 5.3 Max 8 1 0.75 Max 1.27 *0.42 ± 0.08 0.40 ± 0.06 *Dimension including the plating thickness Base material dimension Rev.3, Aug. 2002, page 4. 0.60 0.15 0.25 M Hitachi Code JEDEC JEITA Mass (reference value January, 2002 Unit 0.10 6.10 – 0.30 1.08 0˚ – 8˚ + 0.67 – 0.20 FP-8DA Conforms — ...
Page 7
... Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan. Rev.3, Aug. 2002, page HAT2108R Colophon 6.0 ...