HAT2218R Renesas Technology, HAT2218R Datasheet - Page 4

• Manufacturer Part Number: HAT2218R
• Description: Silicon N Channel Power MOS FET
• Manufacturer: Renesas Technology

HAT2218R
Rev.3.00, Aug.23.2004, page 4 of 9
100
-25
50
20
10
50
40
30
20
10
50
40
30
20
10
5
2
1
0
0.1
Static Drain to Source on State Resistance
0
Pulse Test
V
V
I
D
Reverse Drain Current
DS
GS
= 7.5 A
Dynamic Input Characteristics
0
0.3
Case Temperature
Body-Drain Diode Reverse
10 V
= 4.5 V
4
Gate Charge
25
Recovery Time
V
vs. Temperature
1
DD
V
8
50
DD
= 25 V
di / dt = 100 A / s
V
GS
3
10 V
= 25 V
5 V
1 A, 2 A, 5 A
10 V
75 100 125 150
I
= 0, Ta = 25 C
D
5 V
12
Qg (nC)
= 1 A, 2 A
10
Tc
I
DR
16
30
V
( C)
GS
(A)
5 A
100
20
20
16
12
8
4
0
10000
100
5000
2000
1000
0.5
0.2
0.1
50
20
10
100
500
200
100
5
1
50
10
2
20
0.1 0.2
50
20
10
5
2
1
0.1 0.2
0
V
f = 1 MHz
V
Rg =4.7 , duty
Forward Transfer Admittance vs.
GS
GS
Drain to Source Voltage V
Tc = –25 C
5
75 C
= 0
= 10 V, V
0.5
Switching Characteristics
Drain Current
Typical Capacitance vs.
Drain to Source Voltage
0.5
Drain Current
Drain Current
1
10
25 C
1
t d(off)
2
DD
2
15
= 10 V
1 %
5
5
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10 20
I
D
V
Pulse Test
I
20
10 20
D
DS
(A)
(A)
= 10 V
DS
25
t r
t d(on)
t f
Coss
50 100
Ciss
Crss
50 100
(V)
30