UPA1715 NEC, UPA1715 Datasheet
UPA1715
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UPA1715 Summary of contents
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... Duty Cycle 2. Mounted on ceramic substrate of 1200 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. ...
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... Reverse Recovery Charge TEST CIRCUIT 1 SWITCHING TIME D.U. Wave Form Wave Form = 1 s Duty Cycle °C, All terminals are connected.) A SYMBOL TEST CONDITIONS – – 6.0 A DS(on – – 4 6 DS(on)2 – ...
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TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING AREA 100 I ...
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FORWARD TRANSFER CHARACTERISTICS 100 T = 50˚ 25˚C 25˚C 75˚C 125˚C 150˚C 1 0.1 1.0 2 Gate to Source Voltage - V GS FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT T = 50˚C A 25˚C 25˚C ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 4 100 150 Channel Temperature ...
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Data Sheet G13669EJ1V0DS00 PA1715 ...
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Data Sheet G13669EJ1V0DS00 PA1715 7 ...
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... Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance ...