UPA1741TP NEC, UPA1741TP Datasheet

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UPA1741TP

Manufacturer Part Number
UPA1741TP
Description
SWITCHING N-CHANNEL POWER MOSFET
Manufacturer
NEC
Datasheet
1.UPA1741TP.pdf (7 pages)
www.DataSheet4U.com
Document No. G16373EJ1V0DS00 (1st edition)
Date Published April 2003 NS CP(K)
Printed in Japan
DESCRIPTION
low on-state resistance and excellent switching characteristics, and
designed for high voltage applications such as DC/DC converter.
FEATURES
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Notes 1. PW
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
Gate to Source Voltage (V
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Drain to Source Voltage (V
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation (T
Single Avalanche Current
Single Avalanche Energy
Repetitive Avalanche Current
Repetitive Pulse Avalanche Energy
The PA1741TP is N-channel MOS FET device that features a
High voltage: V
Gate voltage rating: ±30 V
Low on-state resistance
R
Low input capacitance
C
Built-in gate protection diode
Small and surface mount package (Power HSOP8)
DS(on)
iss
PART NUMBER
= 340 pF TYP. (V
2. Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm
3. Starting T
4. T
PA1741TP
= 0.79
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
ch(peak)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
10 s, Duty Cycle
DSS
MAX. (V
ch
150°C, L = 100 H
= 250 V
Note1
C
= 25°C, V
= 25°C)
DS
Note3
= 10 V, V
Note3
DS
C
A
GS
GS
= 25°C)
= 25°C)
= 0 V)
= 10 V, I
= 0 V)
Note4
DD
N-CHANNEL POWER MOS FET
= 125 V, R
GS
Note4
1%
Note2
Power HSOP8
D
PACKAGE
= 0 V)
= 2.5 A)
A
= 25°C, unless otherwise noted. All terminals are connected.)
I
G
DATA SHEET
I
D(pulse)
V
V
D(DC)
E
P
P
T
E
T
I
I
= 25
GSS
DSS
AS
AR
stg
AS
AR
T1
T2
ch
SWITCHING
, L = 100 H, V
55 to +150
MOS FIELD EFFECT TRANSISTOR
±5.0
250
±30
±15
150
5.0
2.5
5.0
2.5
21
1
GS
mJ
mJ
W
W
°C
°C
V
V
A
A
A
A
= 20
PACKAGE DRAWING (Unit: mm)
8
1
1
8
5.2
0.40
4.1 MAX.
0 V
1.27 TYP.
+0.17
–0.2
2.0 ±0.2
+0.10
–0.05
9
5
4
4
5
PA1741TP
0.12 M
S
EQUIVALENT CIRCUIT
0.8 ±0.2
Gate
Gate
Protection
Diode
1, 2, 3
4
5, 6, 7, 8, 9 ; Drain
4.4 ±0.15
6.0 ±0.3
Source
; Source
; Gate
Drain
Body
Diode
0.10
S
2003

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UPA1741TP Summary of contents

Page 1

... T 150° 100 H ch(peak) Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. ...

Page 2

... PG TEST CIRCUIT 3 GATE CHARGE D.U. PG 25°C, unless otherwise noted. All terminals are connected.) A SYMBOL TEST CONDITIONS 250 V, V DSS GSS GS(off Note ...

Page 3

TYPICAL CHARACTERISTICS (T DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 www.DataSheet4U.com Case Temperature - C C FORWARD BIAS SAFE OPERATING AREA 100 ...

Page 4

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE www.DataSheet4U.com Drain to Source Voltage - V DS GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 4.5 4 3.5 3 2.5 2 -50 - ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 1.75 Pulsed 1.5 1.25 1 0.75 0.5 0.25 www.DataSheet4U.com 0 -50 - Channel Temperature - °C ch SWITCHING CHARACTERISTICS 100 10 1 ...

Page 6

SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 5 www.DataSheet4U.com 0.1 0. Inductive Load - 125 ...

Page 7

... NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others ...

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