UPA2701GR NEC, UPA2701GR Datasheet
UPA2701GR
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UPA2701GR Summary of contents
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... DD Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is extemally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version ...
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... DSS Starting T TEST CIRCUIT 3 GATE CHARGE D.U. PG 25°C, All terminals are connected.) A SYMBOL TEST CONDITIONS DSS DS GS ± GSS GS(off) ...
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TYPICAL CHARACTERISTICS (T ! DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING AREA 100 D(pulse) ...
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FORWARD TRANSFER CHARACTERISTICS 100 Pulsed 0 Gate to Source Voltage - V GS FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 Pulsed 10 T ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 20 Pulsed 4 100 125 150 T - Channel Temperature - ˚C ch CAPACITANCE ...
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Data Sheet G15714EJ2V0DS µ µ µ µ PA2701GR ...
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Data Sheet G15714EJ2V0DS µ µ µ µ PA2701GR 7 ...
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... NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others ...