UPA2714GR NEC, UPA2714GR Datasheet
UPA2714GR
Manufacturer Part Number
UPA2714GR
Description
SWITCHING N- AND P-CHANNEL POWER MOS FET
Manufacturer
NEC
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Document No.
Date Published
Printed in Japan
Low on-state resistance
Low C
Small and surface mount package (Power SOP8)
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Remark
DESCRIPTION
designed for power management applications of notebook
computers and Li-ion battery protection circuit.
FEATURES
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Notes 1. PW 10 s, Duty Cycle 1%
The
R
R
R
DS(on)1
DS(on)2
DS(on)3
PART NUMBER
2. Mounted on a ceramic substrate of 1200 mm
3. Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm) , PW = 10 sec
4. Starting T
PA2714GR is P-Channel MOS Field Effect Transistor
PA2714GR
iss
G15982EJ2V0DS00 (2nd edition)
November 2002 NS CP(K)
= 20 m MAX. (V
= 30 m MAX. (V
= 34 m MAX. (V
: C
degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible,
and quickly dissipate it once, when it has occurred.
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
iss
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with NEC Electronics sales
representative for availability and additional information.
= 1370 pF TYP.
ch
Note1
= 25°C , V
Note2
Note3
Note4
Note4
DS
GS
GS
GS
GS
= 0 V)
= 0 V)
=
=
=
DD
10 V, I
4.5 V, I
4.0 V, I
P-CHANNEL POWER MOS FET
=
Power SOP8
15 V, R
PACKAGE
D
D
D
The mark shows major revised points.
A
=
=
=
= 25°C, A ll terminals are connected.)
3.5 A)
G
3.5 A)
3.5 A)
= 25 , L = 100 H, V
DATA SHEET
SWITCHING
I
I
D(pulse)
V
V
D(DC)
P
P
T
E
T
I
GSS
DSS
AS
stg
AS
T1
T2
ch
2
x 2.2 mm
MOS FIELD EFFECT TRANSISTOR
55 to +150
20
28
150
4.9
7
30
2
2
7
GS
=
PACKAGE DRAWING (Unit: mm)
20 0 V
8
1
5.37 MAX.
mJ
W
W
°C
°C
V
V
A
A
A
0.40
1.27
+0.10
–0.05
0.78 MAX.
5
4
PA2714GR
0.12 M
EQUIVALENT CIRCUIT
Gate
1, 2, 3
4
5, 6, 7, 8 ; Drain
0.5 ±0.2
6.0 ±0.3
4.4
; Source
; Gate
Source
Drain
Body
Diode
0.8
0.10
2002
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