MTD9N10E Motorola, MTD9N10E Datasheet - Page 6

• Manufacturer Part Number: MTD9N10E
• Description: TMOS POWER FET
• Manufacturer: Motorola

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MTD9N10E
6
0.01
100
1.0
0.1
10
0.1
0.01
V GS = 20 V
SINGLE
PULSE
T C = 25 C
Figure 11. Maximum Rated Forward Biased
1.0
0.1
1.0E–05
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
D = 0.5
0.2
0.1
Safe Operating Area
R DS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1.0
1.0E–04
SINGLE PULSE
0.01
100 s
0.02
0.05
1 ms
Figure 14. Diode Reverse Recovery Waveform
10
10 ms
I S
1.0E–03
SAFE OPERATING AREA
dc
t p
10 s
Figure 13. Thermal Response
100
di/dt
t a
1.0E–02
t, TIME (s)
t rr
t b
I S
P (pk)
Motorola TMOS Power MOSFET Transistor Device Data
40
32
24
16
0.25 I S
8
0
25
DUTY CYCLE, D = t 1 /t 2
Figure 12. Maximum Avalanche Energy versus
t 1
t 2
T J , STARTING JUNCTION TEMPERATURE ( C)
1.0E–01
Starting Junction Temperature
50
TIME
75
R JC (t) = r(t) R JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t 1
T J(pk) – T C = P (pk) R JC (t)
1.0E+00
100
125
I D = 9 A
1.0E+01
150