RFD16N06LE Intersil Corporation, RFD16N06LE Datasheet - Page 2

• Manufacturer Part Number: RFD16N06LE
• Description: 16A/ 60V/ 0.047 Ohm/ Logic Level/ N-Channel Power MOSFETs
• Manufacturer: Intersil Corporation

Absolute Maximum Ratings
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
Electrical Specifications
Source to Drain Diode Specifications
NOTES:
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Source to Drain Diode Voltage (Note 2)
Diode Reverse Recovery Time
1. T
2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
3. Repetitive Rating: Pulse Width limited by max junction temperature.
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Derate Above 25
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
= 25
o
C to 150
PARAMETER
PARAMETER
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
o
C.
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V
2
T
C
= 25
T
C
= 25
o
C, Unless Otherwise Specified
o
RFD16N06LE, RFD16N06LESM
C, Unless Otherwise Specified
SYMBOL
SYMBOL
V
r
Q
BV
t
Q
DS(ON)
t
d(OFF)
C
C
GS(TH)
Q
R
R
I
I
d(ON)
t
g(TOT)
C
V
GSS
t
DSS
OFF
g(TH)
OSS
ON
RSS
t
g(5)
ISS
θJC
θJA
t
SD
DSS
t
rr
r
f
I
I
SD
SD
I
V
V
V
V
I
V
V
Figures 16, 17
V
V
V
V
f = 1MHz
Figure 12
TO-251AA, TO-252AA
D
D
GS
DS
DS
GS
DD
GS
GS
GS
GS
DS
= 250µA, V
= 16A, V
= 16A
= 16A, dI
= V
= 55V, V
= 50V, V
= +10, -8V
= 30V, I
= 5V, R
= 0V to 10V
= 0V to 5V
= 0V to 1V
= 25V, V
DS
TEST CONDITIONS
TEST CONDITIONS
, I
GS
SD
GS
D
D
GS
GS
GS
J
GS
, T
= 5V
= 16A, R
/dt = 100A/µs
= 250µA, Figure 10
= 5Ω
DGR
= 0V
= 0V, T
= 0V,
DSS
STG
= 0V, Figure 11
pkg
DM
GS
AS
D
D
L
V
I
Figures 18, 19
D
DD
L
= 16A, R
C
= 1.88Ω,
= 48V,
= 150
RFD16N06LE, RFD16N06LESM
o
L
Refer to Peak Current Curve
C
= 3Ω
Refer to UIS Curve
-55 to 175
+10, -8
MIN
0.606
60
MIN
300
260
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
60
60
16
90
-
-
1350
TYP
300
1.8
11
60
48
35
51
29
90
TYP
-
-
-
-
-
-
-
-
-
-
-
-
0.047
MAX
1.65
250
100
115
2.6
10
62
35
80
MAX
3
1
-
-
-
-
-
-
-
-
125
1.5
UNITS
W/
UNITS
o
o
o
o
o
UNITS
W
V
V
V
A
C/W
C/W
µA
µA
µA
nC
nC
nC
C
C
C
pF
pF
pF
o
ns
ns
ns
ns
ns
ns
Ω
V
V
ns
C
V