MTP3N120E Motorola, MTP3N120E Datasheet

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MTP3N120E

Manufacturer Part Number
MTP3N120E
Description
TMOS POWER FET 3.0 AMPERES 1000 VOLTS
Manufacturer
Motorola
Datasheet

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Part Number:
MTP3N120E
Manufacturer:
MOT/ON
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Designer's Data Sheet
TMOS E-FET
Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain–to–source diode
with fast recovery time. Designed for high voltage, high speed
switching applications such as power supplies, PWM motor
controls, and other inductive loads, the avalanche energy capability
is specified to eliminate the guesswork in designs where inductive
loads are switched and offer additional safety margin against
unexpected voltage transients.
* See App. Note AN1327 — Very Wide Input Voltage Range;
E–FET and Designer’s are trademarks of Motorola, Inc.
TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
MAXIMUM RATINGS
UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS
THERMAL CHARACTERISTICS
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1995
Drain–Source Voltage
Drain–Gate Voltage (R GS = 1.0 M )
Gate–Source Voltage — Continuous
Gate–Source Voltage
Drain Current — Continuous @ 25 C
Drain Current
Drain Current
Total Power Dissipation
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting T J = 25 C
Thermal Resistance — Junction to Case
Thermal Resistance
Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds
This advanced high–voltage TMOS E–FET is designed to
Avalanche Energy Capability Specified at Elevated
Temperature
Low Stored Gate Charge for Efficient Switching
Internal Source–to–Drain Diode Designed to Replace External
Zener Transient Suppressor Absorbs High Energy in the
Avalanche Mode
Source–to–Drain Diode Recovery Time Comparable to
Discrete Fast Recovery Diode
Off–line Flyback Switching Power Supply
Derate above 25 C
(V DD = 100 Vdc, V GS = 10 Vdc, PEAK I L = 4.5 Apk, L = 10 mH, R G = 25
— Continuous @ 100 C
— Single Pulse (t p
— Junction to Ambient
— Non–Repetitive (t p
(T C = 25 C unless otherwise noted)
.
10 s)
50 ms)
Rating
G
(T J
t
150 C)
D
S
Symbol
T J , T stg
V DGR
V GSM
V DSS
R JC
R JA
V GS
E AS
I DM
MTP3N120E
P D
T L
I D
I D
CASE 221A–06, Style 5
R DS(on) = 5.0 OHM
TMOS POWER FET
Motorola Preferred Device
3.0 AMPERES
1200 VOLTS
TO–220AB
– 55 to 150
Order this document
Value
1200
1200
62.5
125
101
260
3.0
2.2
1.0
1.0
11
by MTP3N120E/D
20
40
Watts
W/ C
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
C/W
mJ
C
C
1

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MTP3N120E Summary of contents

Page 1

... Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1995 D G Rating 50 ms 150 C) Order this document by MTP3N120E/D MTP3N120E Motorola Preferred Device TMOS POWER FET 3.0 AMPERES 1200 VOLTS R DS(on) = 5.0 OHM CASE 221A–06, Style 5 TO–220AB S Symbol Value ...

Page 2

... MTP3N120E ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic OFF CHARACTERISTICS www.DataSheet4U.com Drain–Source Breakdown Voltage ( Vdc 250 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( 1200 Vdc Vdc 1200 Vdc Vdc 125 C) Gate– ...

Page 3

... Figure 4. On–Resistance versus Drain Current 10,000 1,000 100 10 1 100 125 150 0 200 DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 6. Drain–To–Source Leakage MTP3N120E 100 – 3.8 4.2 4.6 5.0 5.4 5.8 6 DRAIN CURRENT (AMPS) ...

Page 4

... MTP3N120E Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. www.DataSheet4U.com The lengths of various switching intervals ( t) are deter- mined by how fast the FET input capacitance can be charged by current from the generator. The published capacitance data is difficult to use for calculat- ing rise and fall because drain– ...

Page 5

... DM ), the energy rating is specified at rated continuous cur- rent ( accordance with industry custom. The energy rat- ing must be derated for temperature as shown in the accompanying graph (Figure 12). Maximum energy at cur- rents below rated continuous I D can safely be assumed to equal the values indicated. MTP3N120E t d(off d(on ...

Page 6

... MTP3N120E 100 SINGLE PULSE www.DataSheet4U.com 1.0 0.1 R DS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.01 0.1 1.0 10 100 DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 1.0E–05 1.0E–04 6 SAFE OPERATING AREA 120 100 100 s ...

Page 7

... C13 100 1/2 W MUR130 D6 MUR1100 LL D7 C17 2.2 nF MTP3N120E W R12 R13 R15 680 3 R14 W C8 1.2 1000 pF 1/2 W MTP3N120E +V in 470 470 k R3 1/2 W 470 470 k R1 1/2 W INPUT GND m 100 + C11 ...

Page 8

... F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 ––– 1.15 ––– Z ––– 0.080 ––– 2.04 MTP3N120E/D ...

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