FQB30N06 Fairchild Semiconductor, FQB30N06 Datasheet - Page 3

• Manufacturer Part Number: FQB30N06
• Description: 60V N-Channel MOSFET
• Manufacturer: Fairchild Semiconductor

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
2000
1500
1000
500
10
10
10
100
0
10
2
1
0
80
60
40
20
10
0
-1
-1
0
Top :
Bottom : 5.0 V
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
15.0 V
Drain Current and Gate Voltage
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
V
GS
20
V
V
C
C
DS
DS
C
rss
oss
iss
, Drain-Source Voltage [V]
40
, Drain-Source Voltage [V]
I
D
10
V
, Drain Current [A]
GS
0
V
GS
= 20V
10
= 10V
0
※ Notes :
1. 250μ s Pulse Test
2. T
60
C
= 25℃
80
C
C
C
iss
oss
rss
= C
= C
= C
10
※ Note : T
gs
ds
gd
1
+ C
+ C
※ Notes :
gd
gd
100
(C
1. V
2. f = 1 MHz
ds
J
10
GS
= 25℃
= shorted)
= 0 V
1
120
10
10
10
10
10
10
2
1
0
2
1
0
12
10
0.2
2
8
6
4
2
0
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
0.4
175 ℃
25 ℃
Variation vs. Source Current
175 ℃
4
4
0.6
Q
V
V
and Temperature
GS
SD
G
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
25 ℃
-55 ℃
8
0.8
6
V
DS
V
= 48V
DS
1.0
= 30V
12
※ Notes :
1.2
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
※ Note : I
8
DS
GS
= 25V
16
= 0V
D
1.4
= 30A
Rev. A1. May 2001
20
10
1.6