BUZ71 STMicroelectronics, BUZ71 Datasheet
BUZ71
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BUZ71 Summary of contents
Page 1
... DIN HUMIDITY CAT EGORY (DIN 40040) IEC CLIMAT IC CAT EG ORY (DIN IEC 68-1) First digit of the datecode being identifies silicon characterized in this datasheet. July 1999 STripFET INTERNAL SCHEMATIC DIAGRAM = BUZ71 POWER MOSFET TO-220 Value ...
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... BUZ71 THERMAL DATA R Thermal Resistance Junction-case thj -case R Thermal Resistance Junction-ambient thj -amb AVALANCHE CHARACTERISTICS Symbo l I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS o (starting ELECTRICAL CHARACTERISTICS (T OFF Symbo l Parameter V Drain-source ...
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... SD t Reverse Recovery rr Time Q Reverse Recovery rr Charge ( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Safe Operating Area Test Con ditions di/dt = 100 150 Thermal Impedance BUZ71 Min. Typ. Max. Unit 1 0.17 C 3/8 ...
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... BUZ71 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/8 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...
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... Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature BUZ71 5/8 ...
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... BUZ71 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...
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... BUZ71 inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151 P011C 7/8 ...
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... BUZ71 Information furnished is believed to be accurate and reliable. However, STMicroelect r onics assumes no responsibil ity for the consequences of use of such information nor for any infringement of patents or other rights of third part i es which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectro nics. Specific ation mentioned in this publication are subjec t to change without notice ...