2N2060 Microsemi, 2N2060 Datasheet - Page 2

• Manufacturer Part Number: 2N2060
• Description: UNITIZED DUAL NPN SILICON TRANSISTOR
• Manufacturer: Microsemi

ELECTRICAL CHARACTERISTICS (con’t)
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
(3)Pulse Test: Pulse Width 250 to 350 s, Duty Cycle
Forward-Current Transfer Ratio
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Common Emitter Small-Signal Short-Circuit
Forward-Current Transfer ratio
Small-Signal Short-Circuit Input Impedance
Small-Signal Short-Circuit Forward-Current Transfer Ratio
Small-Signal Short-Circuit Input Impedance
Small-Signal Open-Circuit Output Admittance
Input Capacitance
Output Capacitance
I
I
I
I
I
I
I
I
I
I
I
V
V
C
C
C
C
C
C
C
C
C
C
C
EB
CB
= 50 mAdc, I
= 50 mAdc, I
= 50 mAdc, V
= 10 Adc, V
= 100 Adc, V
= 1.0 mAdc, V
= 10 mAdc, V
= 1.0 mAdc, V
= 1.0 mAdc, V
= 1.0 mAdc, V
= 1.0 mAdc, V
= 0.5 Vdc, I
= 10 Vdc, I
B
B
E
CE
CE
E
CE
CE
CE
= 5.0 mAdc
= 5.0 mAdc
CB
CE
CE
CE
= 0, 100 kHz
= 0, 100 kHz
= 5.0 Vdc
= 10 Vdc, f = 20 MHz
= 5.0 Vdc
= 5.0 Vdc, f = 1.0 kHz
= 5.0 Vdc, f = 1.0 kHz
= 5.0 Vdc, f = 1.0 kHz
= 5.0 Vdc, f = 1.0 kHz
= 5.0 Vdc
= 5.0 Vdc
Characteristics
(3)
f
f
1.0 MHz
1.0 MHz
2N2060, 2N2060L JAN SERIES
2.0%.
Symbol
V
V
C
C
CE(sat)
BE(sat)
h
h
h
h
h
h
FE
obo
oe
ibo
ib
fe
ie
fe
1,000
Min.
25
30
40
50
20
50
3
0
Max.
4,000
120
150
150
0.3
0.9
75
90
25
30
16
85
15
Page 2 of 2
Unit
Vdc
Vdc
mhos
pF
pF
120101