BF556A Philips Semiconductors, BF556A Datasheet - Page 4

• Manufacturer Part Number: BF556A
• Description: N-channel silicon junction field-effect transistors
• Manufacturer: Philips Semiconductors

Philips Semiconductors
DYNAMIC CHARACTERISTICS
T
1996 Jul 29
C
C
g
g
g
g
V
SYMBOL
amb
is
fs
rs
os
n
N-channel silicon junction
field-effect transistors
is
rs
handbook, halfpage
V
Fig.2
DS
= 25 C; unless otherwise specified.
I DSS
(mA)
= 15 V.
20
16
12
8
4
0
Drain current as a function of gate-source
cut-off voltage; typical values.
0
input capacitance
reverse transfer capacitance
common source input conductance
common source transfer conductance
common source reverse conductance
common source output conductance
equivalent input noise voltage
1
2
PARAMETER
3
4
5
V GSoff (V)
6
MRC154
7
V
V
V
V
V
V
V
V
V
V
V
V
V
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
4
= 15 V; V
= 15 V; V
= 15 V; V
= 15 V; V
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
handbook, halfpage
V
Fig.3
DS
(mS)
Y fs
= 15 V; I
D
D
D
D
D
D
D
D
D
10
GS
GS
GS
GS
CONDITIONS
8
6
4
2
0
= 1 mA; f = 100 MHz
= 1 mA; f = 450 MHz
= 1 mA; f = 100 MHz
= 1 mA; f = 450 MHz
= 1 mA; f = 100 MHz
= 1 mA; f = 450 MHz
= 1 mA; f = 100 MHz
= 1 mA; f = 450 MHz
= 1 mA; f = 100 Hz
0
Forward transfer admittance as a function
of gate-source cut-off voltage; typical
values.
= 10 V; f = 1 MHz
= 0; f = 1 MHz
= 10 V; f = 1 MHz
= 0; f = 1 MHz
D
BF556A; BF556B; BF556C
= 1 A.
1
2
3
4
Product specification
5
1.7
3
0.8
0.9
15
300
2
1.8
30
60
40
6
40
TYP.
V GSoff (V)
6
MRC156
7
pF
pF
pF
pF
mS
mS
nV/ Hz
S
S
S
S
S
S
UNIT