NE334S01-T1B NEC, NE334S01-T1B Datasheet - Page 3

• Manufacturer Part Number: NE334S01-T1B
• Description: C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
• Manufacturer: NEC

TYPICAL CHARACTERISTICS (T
Gain Calculations
MSG. =
MAG. =
500
400
300
200
100
100
½
½
½
½
80
60
40
20
–2.0
0
S
S
S
S
0
21
12
21
12
½
½
½
½
(K
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
±
50
V
T
Ö
GS
A
K
- Ambient Temperature - ˚C
- Gate to Source Voltage - V
2
-
1)
100
–1.0
150
K =
,
= S
A
1 +
= 25
11
×
S
V
½
200
22
DS
,
° °
2
½
C)
-
= 2 V
½
2
S
S
- ½
12
21
½½
×
S
250
S
11
0
S
12
½
21
2
½
- ½
S
22
½
2
100
80
60
40
20
24
20
16
12
8
4
0
1
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
1
DS
2
- Drain to Source Voltage - V
|S
21S
f - Frequency - GHz
|
2
2
4
MSG.
6
3
8 10
V
I
NE334S01
D
14
DS
4
= 15 mA
V
= 2 V
–0.2 V
–0.4 V
–0.6 V
GS
MAG.
20
= 0 V
5
30
3